Single Bipolar Transistors 2SAR372P5T100R product image

2SAR372P5T100R

$0.87
  • Description:TRANS PNP 120V 0.7A MPT3
  • Series:-

SKU:2023e6a7860d Category: Brand:

  
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2SAR372P5T100R is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS PNP 120V 0.7A MPT3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SAR372P5T100R

  • Description:TRANS PNP 120V 0.7A MPT3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):700 mA
  • Voltage - Collector Emitter Breakdown (Max):120 V
  • Vce Saturation (Max) @ Ib, Ic:360mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 100mA, 5V
  • Power - Max:500 mW
  • Frequency - Transition:300MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-243AA
  • Supplier Device Package:MPT3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SAR372P5T100R

2SAR372P5T100R

Single Bipolar Transistors Overview

The 2SAR372P5T100R is a PNP silicon bipolar junction transistor (BJT) manufactured by ROHM Semiconductor. It is housed in an SOT-89-3 surface-mount package and designed for middle power applications. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of -120 V, a maximum collector-base voltage (VCBO) of -120 V, and a maximum emitter-base voltage (VEBO) of -6 V. The device supports a continuous DC collector current of -700 mA with a power dissipation rating of 2 W. It features a gain-bandwidth product (fT) of 300 MHz and a maximum operating temperature of +150°C.

Single Bipolar Transistors Feature Summary

  • Designed as a middle power transistor suitable for automotive applications
  • Utilizes a compact SOT-89-3 surface-mount package for efficient board space utilization
  • Constructed using silicon technology for reliable performance

Single Bipolar Transistors Applications

  • Automotive electronic circuits
  • Middle power driver stages
  • Low-frequency amplification tasks

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm exact packaging and tape-and-reel specifications. Ensure that the selected variant matches the required automotive grade standards if intended for vehicle-mounted systems. Cross-reference the part number with the latest RoHS compliance documentation to meet regulatory requirements for your specific manufacturing region.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with a -120 V breakdown voltage and -700 mA current capacity is required in a small surface-mount form factor. The high maximum operating temperature of +150°C makes it suitable for environments with significant thermal stress. Consider the 300 MHz gain-bandwidth product for applications requiring moderate frequency response within a middle power classification.

Single Bipolar Transistors Part Context

This component belongs to the 2SARx series of PNP transistors from ROHM Semiconductor. The series is characterized by its suitability for middle power applications and automotive use cases. The device shares the SOT-89-3 package code with other members of the family, such as the 2SCR372PHZGT100R NPN counterpart, facilitating complementary circuit designs.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.

2SAR372P5T100R2SAR372P5T100R
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