Single Bipolar Transistors 2SAR375P5T100Q product image

2SAR375P5T100Q

$0.89
  • Description:TRANS PNP 120V 1.5A MPT3
  • Series:-

SKU:b6aff5141a07 Category: Brand:

  
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2SAR375P5T100Q is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS PNP 120V 1.5A MPT3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SAR375P5T100Q

  • Description:TRANS PNP 120V 1.5A MPT3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):1.5 A
  • Voltage - Collector Emitter Breakdown (Max):120 V
  • Vce Saturation (Max) @ Ib, Ic:320mV @ 80mA, 800mA
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 200mA, 5V
  • Power - Max:500 mW
  • Frequency - Transition:280MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-243AA
  • Supplier Device Package:MPT3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SAR375P5T100Q

2SAR375P5T100Q

Single Bipolar Transistors Overview

The 2SAR375P5T100Q is a PNP silicon bipolar junction transistor manufactured by ROHM Semiconductor. It operates in the SOT-89-3 (MPT3) surface-mount package. Key electrical ratings include a maximum collector current of -1.5 A and a collector-emitter voltage of -120 V. The device features a power dissipation capacity of 500 mW and a transition frequency of 280 MHz. DC current gain ranges from 120 to 390, with a maximum collector-emitter saturation voltage of 160 mV. The component supports a maximum operating temperature of +150°C.

Single Bipolar Transistors Feature Summary

  • Designed for middle power driver applications requiring high voltage tolerance.
  • Optimized for low collector-emitter saturation voltage to improve efficiency.
  • Suitable for general-purpose switching and low-frequency amplification tasks.

Single Bipolar Transistors Applications

  • Middle power driver circuits
  • General-purpose switching applications
  • Low-frequency amplification stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix T100Q against the official datasheet to confirm packaging and tape specifications. Ensure the MPT3 package dimensions align with the target PCB footprint. Confirm RoHS compliance status through the manufacturer's latest documentation before finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with -120V breakdown and -1.5A continuous current capability is required in an SOT-89 package. Consider the 500mW thermal limit and 280MHz bandwidth for appropriate circuit design. Verify that the 160mV saturation voltage meets the efficiency requirements of the load.

Single Bipolar Transistors Part Context

This part belongs to the 2SAR series of PNP transistors from ROHM Semiconductor. It serves as the complementary counterpart to the NPN 2SCR375P5T100Q. The series targets middle power applications, offering a balance between voltage handling and current drive capabilities in a compact surface-mount form factor.

Single Bipolar Transistors Replacement Considerations

The 2SAR375P5T100Q is functionally compatible with the standard 2SAR375P5 variant. Both share identical electrical characteristics and the MPT3 package. Designers may substitute one for the other provided the packaging format matches the assembly process.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter saturation voltage?

The maximum collector-emitter saturation voltage is specified as 160 mV.

Is this component suitable for automotive use?

No, this specific part is not recommended for automotive equipment; it is classified as a standard-grade product.

What is the DC current gain range?

The DC current gain (hFE) ranges from a minimum of 120 to a maximum of 390.

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