2SAR522EBTL

Single Bipolar Transistors Overview

The 2SAR522EBTL is a PNP silicon bipolar junction transistor manufactured by ROHM Semiconductor. It features an EMT3F (SOT-416FL) surface-mount package and supports a maximum collector-emitter voltage of 20 V with a continuous collector current of 200 mA. The device offers a transition frequency of 350 MHz and power dissipation of 150 mW, operating within a temperature range up to +150°C.

Single Bipolar Transistors Feature Summary

• PNP polarity configuration for general-purpose amplification applications
• Surface-mount SMD/SMT installation style in compact EMT3F package
• High-speed switching capability supported by 350 MHz transition frequency

Single Bipolar Transistors Applications

• General purpose signal amplification circuits
• Low-power switching applications
• Consumer electronics signal processing

Single Bipolar Transistors Procurement Notes

Verify the exact ordering suffix matches the required variant. Confirm RoHS compliance status through official documentation. Ensure the package type aligns with PCB layout requirements. Check datasheet for specific thermal characteristics relevant to the application environment.

Single Bipolar Transistors Selection Notes

Select this component for low-voltage PNP switching needs requiring small form factors. Consider the 200 mA current limit and 150 mW power dissipation constraints. Evaluate the 350 MHz bandwidth against circuit speed requirements. Compare alternative packages if higher current capacity is necessary.

Single Bipolar Transistors Part Context

This part belongs to ROHM's discrete semiconductor portfolio, specifically within the bipolar transistor category. It complements other small-signal devices designed for efficient power management and signal control in portable and industrial electronic systems.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.