2SAR553PHZGT100

Single Bipolar Transistors Overview

The 2SAR553PHZGT100 is a PNP silicon bipolar junction transistor manufactured by ROHM Semiconductor. It features a single configuration in an SOT-89-3 surface-mount package. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V, a maximum collector-base voltage (VCBO) of 50 V, and an emitter-base voltage (VEBO) of 6 V. The device supports a continuous DC collector current of 2 A with a power dissipation rating of 2 W. It exhibits a low collector-emitter saturation voltage of 400 mV and a gain-bandwidth product (fT) of 320 MHz. The DC current gain (hFE) ranges from 180 to 450 at -50 mA and -2 V. The component operates up to a maximum temperature of +150°C.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for efficient switching performance
• High DC current gain suitable for driver applications
• Automotive-grade reliability compliant with AEC-Q101 standards

Single Bipolar Transistors Applications

• Automotive driver circuits
• Low-frequency amplifier stages
• General-purpose switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official ROHM documentation to confirm packaging details and compliance status. Ensure the procurement channel sources directly from authorized distributors or the manufacturer to guarantee authenticity. Cross-reference the full part number with the latest datasheet revision to confirm availability of RoHS and REACH SVHC declarations. Confirm that the received components match the specified SOT-89-3 package and polarity requirements for your design.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with 50 V voltage rating and 2 A current capacity is required in a compact SOT-89 package. Consider its low saturation voltage for minimizing power loss in driver circuits. Verify that the 320 MHz transition frequency meets the bandwidth requirements of the intended application. Ensure the thermal management design accommodates the 2 W power dissipation capability within the operating temperature range.

Single Bipolar Transistors Part Context

This component belongs to the 2SAR series of PNP transistors designed for automotive and general electronic applications. It shares similar electrical characteristics with other members of the family but differs in packaging and specific parameter tolerances. The SOT-89-3 package provides a balance between power handling and board space efficiency compared to smaller signal packages.

Single Bipolar Transistors Replacement Considerations

The 2SAR553PFRA is documented as a similar level replacement with the same pinout and package, though it is not recommended for new designs.