2SAR562F3TR

Single Bipolar Transistors Overview

The 2SAR562F3TR is a PNP silicon bipolar junction transistor manufactured by ROHM Semiconductor. It features a collector-emitter voltage (VCEO) of -30 V and a continuous collector current of -6 A. The device dissipates 1 W of power and operates within a temperature range of -55°C to +150°C. Key electrical parameters include a DC current gain (hFE) ranging from 200 to 500 at -500 mA and -3 V, with a minimum guaranteed gain of 200. It utilizes a DFN2020-3S surface-mount package.

Single Bipolar Transistors Feature Summary

• High collector current capability of -6 A for robust switching performance
• Compact DFN2020-3S surface-mount package design
• Wide operating junction temperature range up to +150°C

Single Bipolar Transistors Applications

• Automotive engine control unit switching circuits
• Industrial power supply load switches
• General-purpose high-current PNP transistor applications

Single Bipolar Transistors Procurement Notes

Verify the specific suffix F3TR against the official ROHM datasheet to confirm the reel packaging quantity and tape-and-reel specifications. Ensure the ordering part number matches the exact DFN2020-3S package code required for your PCB footprint. Cross-reference the RoHS compliance status and long-term availability plans directly with the manufacturer before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a compact PNP transistor requires -6 A current handling in a small form factor. The -30 V rating suits low-voltage automotive and industrial systems. Compare the hFE range of 200 to 500 against circuit requirements for base drive calculations. Consider the 1 W power dissipation limit and thermal management needs for the DFN2020-3S package during layout.

Single Bipolar Transistors Part Context

This part belongs to the 2SAR series of middle-power transistors from ROHM Semiconductor. The series emphasizes energy efficiency and reliability for automotive and industrial markets. The 2SAR562 variant specifically targets applications needing higher current density than standard signal transistors while maintaining a small surface-mount footprint for space-constrained designs.

Single Bipolar Transistors Replacement Considerations

Check ROHM documentation for direct cross-references or similar level parts. Verify pinout compatibility and electrical parameter overlaps if substituting with other -6 A PNP transistors in the DFN2020-3S package.