2SAR563F3TR

Single Bipolar Transistors Overview

The 2SAR563F3TR is a PNP bipolar junction transistor manufactured by ROHM Semiconductor. It features a collector-emitter voltage (VCEO) of -50 V and a continuous collector current of -6 A. The device operates with a power dissipation of 1 W and has a transition frequency (fT) of 200 MHz. DC current gain ranges from 180 to 450 at -500 mA. It utilizes a DFN-2020-3S-3 surface-mount package and supports operating temperatures up to +150°C.

Single Bipolar Transistors Feature Summary

• High current handling capability for automotive applications
• Low saturation voltage for efficient switching
• Compact surface-mount design

Single Bipolar Transistors Applications

• Automotive starter systems
• Power management circuits
• Motor control interfaces

Single Bipolar Transistors Procurement Notes

Verify the specific suffix F3TR against official ROHM documentation to confirm package type and reel specifications. Ensure compatibility with DFN-2020-3S-3 footprint requirements during PCB layout. Cross-reference thermal resistance data in the datasheet for adequate heat dissipation planning in high-current scenarios.

Single Bipolar Transistors Selection Notes

Select this component when a PNP BJT with -6 A capacity and -50 V rating is required in a compact form factor. Consider the 200 MHz transition frequency for moderate-speed switching needs. Evaluate the 1 W power dissipation limit against thermal constraints before implementation.

Single Bipolar Transistors Part Context

This part belongs to ROHM's lineup of surface-mount bipolar transistors designed for automotive reliability. It serves as a middle-power solution bridging small-signal devices and larger discrete packages, offering robust performance in space-constrained electronic assemblies.

Single Bipolar Transistors Replacement Considerations

Consult official substitution guides for equivalent PNP BJTs with matching -6 A and -50 V ratings. Verify pinout compatibility with the DFN-2020-3S-3 package before replacing.