2SAR586D3TL1

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SAR586D3TL1 is a PNP bipolar junction transistor (BJT) designed for power applications. It features a collector-emitter voltage (VCEO) of -80 V and a continuous collector current (Ic) of -5 A. The device is housed in a TO-252 (DPAK) surface-mount package with a maximum power dissipation (Pc) of 10 W. Key electrical characteristics include a DC current gain (hFE) ranging from 120 to 390 at specified test conditions, and a low collector-emitter saturation voltage (VCE(sat)). The component operates within a storage temperature range of -55°C to +150°C and complies with RoHS standards.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage (VCE(sat)) design
• Suitable for low-frequency amplifier applications
• High DC current gain (hFE) up to 390

Single Bipolar Transistors Applications

• Low-frequency amplification circuits
• Power switching applications requiring high current handling
• General-purpose PNP transistor stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix TL1 to confirm the tape-and-reel packaging format and quantity of 2500 units per reel. Ensure compatibility with the TO-252 (DPAK/SC-63) footprint on the target PCB. Confirm that the application does not require automotive qualification, as this standard-grade product is explicitly noted as unsuitable for vehicle-mounted equipment. Cross-reference the manufacturer part number against official ROHM databases to avoid counterfeit components.

Single Bipolar Transistors Selection Notes

Select the 2SAR586D3TL1 when an application demands a PNP transistor with -80 V breakdown and -5 A current capacity in a DPAK package. It is appropriate for designs prioritizing low saturation voltage to minimize conduction losses in low-frequency operations. Consider alternative packages if higher thermal performance or different pinout configurations are required. Verify that the hFE range of 120 to 390 meets the biasing requirements of the specific circuit design.

Single Bipolar Transistors Part Context

This component belongs to the ROHM 2SAR series of PNP power transistors. It shares the same package code (TO-252/DPAK) and terminal configuration with other devices in the family, such as the 2SAR572 and 2SAR579 series. However, it is distinct in its -80 V rating and -5 A current capability, differentiating it from lower-voltage or lower-current variants within the broader product line.

Single Bipolar Transistors Replacement Considerations

Public documentation confirms the 2SAR586D3 as the base part number equivalent. No direct cross-model substitutes with identical electrical specifications and package dimensions are explicitly listed in the provided source material.