2SB0709ARL

Single Bipolar Transistors Overview

The Panasonic 2SB0709ARL is a silicon PNP epitaxial planar transistor designed for general amplification. It operates with a maximum collector-emitter voltage of -45 V and a continuous collector current of -100 mA. The device features a transition frequency of 80 MHz and a collector power dissipation of 200 mW at 25°C ambient temperature. It utilizes the Mini3-G1 (SC-59) surface-mount package, which supports automatic insertion via tape or magazine packing.

Single Bipolar Transistors Feature Summary

• High forward current transfer ratio hFE
• Mini type package allowing downsizing of equipment

Single Bipolar Transistors Applications

• General amplification circuits
• Office equipment
• Communications equipment
• Measuring instruments
• Household appliances

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm the packaging format, as 'ARL' indicates a specific reel configuration. Confirm compliance with the RoHS Directive (EU 2002/95/EC). Check the manufacturer's website for the latest product lifecycle status, as this component may be subject to maintenance or discontinuation plans.

Single Bipolar Transistors Selection Notes

Select this component for low-power general amplification tasks requiring a compact footprint. Ensure the design accommodates the -45 V collector-emitter voltage limit and the 200 mW power dissipation constraint. Verify that the required hFE gain falls within the specified rank classifications (Q, R, S, or No-rank) for the application.

Single Bipolar Transistors Part Context

This component belongs to the Panasonic 2SB0709A series of silicon PNP transistors. It serves as a complementary pair to the NPN 2SD0601A transistor. The device is manufactured using an epitaxial planar process and is intended for standard electronic applications rather than specialized high-reliability environments.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SD0601A as the complementary NPN transistor. For direct replacement, verify pinout compatibility and ensure the substitute meets the -45 V voltage rating and -100 mA current requirements.

Single Bipolar Transistors FAQ

What is the maximum collector-base voltage rating?

The absolute maximum collector-base voltage (V_CBO) with the emitter open is -45 V.

How is the hFE gain classified?

The forward current transfer ratio (hFE) is classified into ranks Q (160-260), R (210-340), S (290-460), and No-rank (160-460).

What is the transition frequency of the device?

The transition frequency (f_T) is 80 MHz, measured at V_CB = -10 V, I_E = 1 mA, and f = 200 MHz.