2SB09560RL

Single Bipolar Transistors Overview

The Panasonic 2SB0956 is a silicon PNP epitaxial planar transistor designed for low-frequency output amplification. It features a MiniP3-F1 package and operates with a collector-emitter voltage of -20 V, a continuous collector current of -1 A, and a peak collector current of -2 A. The device provides a collector power dissipation of 1 W at 25°C ambient temperature. Electrical characteristics include a transition frequency (fT) of 200 MHz and a forward current transfer ratio (hFE) ranging from 130 to 280 depending on the rank classification.

Single Bipolar Transistors Feature Summary

• Designed for low-frequency output amplification applications
• Features a Mini Power type package that allows equipment downsizing and supports automatic insertion via tape or magazine packing
• Provides large collector power dissipation capability

Single Bipolar Transistors Applications

• General electronic equipment such as office equipment
• Communications equipment
• Measuring instruments
• Household appliances

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix required for your application, as it determines the hFE rank classification. Confirm the component lifecycle status before finalizing procurement plans, as this product may be subject to planned maintenance or discontinuation schedules. Ensure compliance with export control regulations if applicable to your region.

Single Bipolar Transistors Selection Notes

Select the appropriate hFE rank based on circuit requirements: Rank R offers a gain range of 130 to 210, while Rank S provides 180 to 280. Ensure the design accommodates the absolute maximum ratings, particularly the -20 V collector-emitter voltage limit. Consider the thermal management requirements for the MiniP3-F1 package to maintain safe junction temperatures during operation.

Single Bipolar Transistors Part Context

This component belongs to the Panasonic Transistors product line and serves as a complementary device to the 2SD1280 NPN transistor. It utilizes a silicon PNP epitaxial planar construction housed in a MiniP3-F1 package. The datasheet indicates compliance with the RoHS Directive (EU 2002/95/EC).

Single Bipolar Transistors Replacement Considerations

The 2SB0956 is explicitly documented as complementary to the 2SD1280. Verify pinout compatibility and electrical parameters when sourcing substitutes. Consult official documentation for the latest specifications and availability status.