Single Bipolar Transistors 2SB1119S-TD-E product image

2SB1119S-TD-E

$0.13
  • Description:BIP PNP 1A 25V
  • Series:*

SKU:775bc750760f Category: Brand:

  
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2SB1119S-TD-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is BIP PNP 1A 25V. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SB1119S-TD-E

  • Description:BIP PNP 1A 25V
  • Series:*
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:-
  • Current - Collector (Ic) (Max):-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Power - Max:-
  • Frequency - Transition:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SB1119S-TD-E

2SB1119S-TD-E

Single Bipolar Transistors Overview

The onsemi 2SB1119S-TD-E is a PNP bipolar junction transistor designed for general-purpose switching and amplification applications. It features a maximum collector current of 1 A and a collector-emitter voltage rating of 25 V. The device is housed in a small outline package with three terminals, utilizing plastic/epoxy material. Key electrical specifications include a minimum DC current gain (hFE) of 40 and a maximum power dissipation of 1.3 W in an environmental setting. The component supports operating temperatures up to 150 °C and connects the case to the collector terminal.

Single Bipolar Transistors Feature Summary

  • PNP polarity configuration suitable for standard circuit topologies
  • Single element construction within a compact small outline package
  • Collector-connected case design for thermal management

Single Bipolar Transistors Applications

  • Low-frequency amplifier circuits
  • Electronic governor systems
  • General-purpose switching applications

Single Bipolar Transistors Procurement Notes

Verify the manufacturer designation carefully, as historical data links this part number to SANYO, while current distribution channels list it under onsemi. Confirm the specific suffix 'TD-E' matches your supply chain requirements. Ensure the component meets RoHS compliance standards if required by your manufacturing process. Cross-reference the datasheet version to confirm pinout and electrical limits align with your design specifications before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with a 1 A continuous collector current capability is required. The 25 V collector-emitter voltage rating defines its suitability for low-voltage logic and power stages. Consider the 1.3 W power dissipation limit and 150 °C maximum junction temperature for thermal design constraints. The single configuration and small outline package make it appropriate for space-constrained designs requiring moderate gain characteristics.

Single Bipolar Transistors Part Context

This component belongs to the family of bipolar junction transistors manufactured by onsemi. It serves as a discrete semiconductor device used for signal processing and power control. The product line includes various configurations tailored for industrial and consumer electronics. This specific model represents a standard solution for applications requiring reliable PNP switching performance within defined voltage and current boundaries.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

2SB1119S-TD-E2SB1119S-TD-E
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