2SB1132T100P

Single Bipolar Transistors Overview

The 2SB1132T100P is a PNP silicon epitaxial planar transistor designed for medium power applications. It features a collector-emitter voltage of -32V and a continuous collector current of -1A. The device exhibits a typical low collector-emitter saturation voltage of -0.2V at specified currents. Electrical characteristics include a DC current gain (hFE) ranging from 120 to 390, with transition frequencies up to 150MHz. It operates within a junction temperature range of -55°C to +150°C and utilizes the MPT3 surface-mount package.

Single Bipolar Transistors Feature Summary

• Epitaxial planar structure utilizing PNP silicon technology
• Low collector-emitter saturation voltage for efficient switching
• Complementary design matching specific NPN transistor series

Single Bipolar Transistors Applications

• General-purpose audio visual equipment
• Office automation devices
• Communication devices
• Electronic appliances
• Amusement devices

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized ROHM channels or certified distributors. Confirm datasheet revision status prior to integration. Ensure compliance with RoHS directives and environmental regulations applicable to your region. Validate that the MPT3 package dimensions align with your PCB footprint requirements. Review absolute maximum ratings carefully to prevent operational failure.

Single Bipolar Transistors Selection Notes

Select this component for circuits requiring a PNP driver with moderate current handling capabilities. Consider its complementary relationship with designated NPN transistors for push-pull configurations. Evaluate thermal management strategies based on the specified power dissipation limits. Verify hFE binning requirements against circuit gain specifications. Assess packaging compatibility for automated surface-mount assembly processes.

Single Bipolar Transistors Part Context

This transistor belongs to ROHM's medium power bipolar junction transistor lineup. It shares electrical similarities with the 2SA1515S and 2SB1237 models, allowing for potential pin-compatible substitutions in certain designs. The device is engineered for general-use electronics rather than high-reliability automotive or aerospace environments. Its small outline package facilitates compact board layouts.

Single Bipolar Transistors Replacement Considerations

The 2SA1515S and 2SB1237 are documented as electrically similar components with identical pinouts and packages. These parts may serve as direct substitutes where compatible. Verify specific hFE ranges and breakdown voltages before implementation. Consult official documentation for detailed parameter comparisons.