2SB1143S

Single Bipolar Transistors Overview

The onsemi 2SB1143S is a PNP silicon epitaxial planar bipolar junction transistor housed in a TO-126ML package. It features a maximum collector-to-emitter voltage of 50 V and a continuous collector current rating of 4 A, with a peak pulse current capacity of 6 A. The device utilizes FBET and MBIT processes to achieve low saturation voltage and wide safe operating area characteristics. Key electrical parameters include a DC current gain (hFE) ranging from 100 to 560 at 100 mA, a gain-bandwidth product of 150 MHz, and a collector-to-emitter saturation voltage of up to 700 mV at 2 A. Thermal dissipation reaches 10 W at 25°C case temperature.

Single Bipolar Transistors Feature Summary

• Adopts FBET and MBIT processes for enhanced performance
• Provides low collector-emitter saturation voltage
• Supports large current capacity and wide safe operating area

Single Bipolar Transistors Applications

• Voltage regulators
• Relay drivers
• Lamp drivers
• Electrical equipment

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'S' corresponds to the bag-packed configuration containing 200 pieces per bag as documented in the official datasheet. Confirm that the component meets Pb Free requirements. Ensure the procurement channel sources directly from authorized distributors or verified suppliers to guarantee authenticity and proper handling of the through-hole TO-126ML package.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high-current switching with low saturation voltage. The TO-126ML package facilitates through-hole mounting and heat sinking. Consider the hFE ranking (R, S, T, U) if specific gain ranges are required for the circuit design. Verify thermal management capabilities, as power dissipation drops significantly without a heatsink compared to the 10 W rating at 25°C case temperature.

Single Bipolar Transistors Part Context

The 2SB1143S belongs to the 2SB1143/2SD1683 complementary pair series manufactured by onsemi. It serves as the PNP counterpart to the NPN 2SD1683. Both devices share identical structural characteristics and are designed for general-purpose switching applications. The series is characterized by its robust construction and suitability for driving loads in various electronic equipment.

Single Bipolar Transistors Replacement Considerations

The 2SD1683 is the complementary NPN device within the same series. For direct replacement, verify pinout compatibility and ensure the substitute part matches the TO-126ML package dimensions and electrical ratings specified in the original design.

Single Bipolar Transistors FAQ

What is the difference between the 2SB1143S and 2SB1143T?

Both devices share the same electrical specifications and package type. The distinction lies in the shipping packaging; the 'S' suffix indicates a bag packing quantity of 200 pieces, while the 'T' suffix denotes tape and reel packaging.

How is the DC current gain classified?

The DC current gain (hFE) at IC = -100mA is classified into four ranks: R (100 to 200), S (140 to 280), T (200 to 400), and U (280 to 560).

What is the maximum collector current pulse rating?

The maximum collector pulse current (ICP) rating is 6 A, which exceeds the continuous collector current rating of 4 A.