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2SB1181TLP is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS PNP 80V 1A CPT3. Review the specifications below when checking this part for your BOM.
The 2SB1181TLP is a PNP silicon power bipolar junction transistor manufactured by ROHM Semiconductor. It features a maximum collector current of 1.0 A and a collector-emitter breakdown voltage of 80 V. The device is housed in a CPT3 surface-mount package, which corresponds to the SC-63 form factor. Key electrical characteristics include a minimum DC current gain (hFE) of 120 and a maximum collector-emitter saturation voltage of 0.4 V under specified test conditions. The component supports a maximum operating junction temperature of 150 °C.
Verify the exact suffix against official ROHM documentation to confirm packaging and tape specifications. Confirm RoHS compliance status and lead-free certification requirements for your assembly process. Check for any design-in restrictions or obsolescence notices directly from the manufacturer before finalizing procurement plans.
Select this component when an 80V PNP transistor with 1A continuous current capability is required. Ensure the application demands a low saturation voltage around 0.4V. Verify that the CPT3/SC-63 package fits the PCB layout constraints. Consider the complementary 2SD1898 or 2SD1733 if a matched pair is needed for push-pull configurations.
This part belongs to ROHM's middle power transistor series, designed for general-purpose switching and amplification. It serves as the PNP counterpart to the 2SD1898 and 2SD1733 NPN transistors. The CPT3 package provides a compact solution for surface-mount designs requiring moderate power handling capabilities within standard industrial and consumer electronics applications.
Official complementary substitutes include the 2SD1898 and 2SD1733 NPN transistors for matched pairs. Direct replacements should match the 80V, 1A, and CPT3 package specifications. Verify pinout compatibility and thermal characteristics before substituting.
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