2SB1181TLR

Single Bipolar Transistors Overview

The 2SB1181TLR is a PNP silicon power bipolar junction transistor manufactured by Rohm Semiconductor. It features a maximum collector current of 1 A and a collector-emitter breakdown voltage of -80 V. The device utilizes the CPT3 surface-mount package, also known as TO-252 or DPAK. Key electrical characteristics include a minimum DC current gain (hFE) of 120 at specified test conditions and a maximum collector-base cutoff current of 100 nA. The component supports a maximum operating junction temperature of 150°C and complies with RoHS3 standards.

Single Bipolar Transistors Feature Summary

• Designed for middle power driver applications requiring robust switching performance.
• Offers low saturation voltage to minimize power loss during conduction.
• Complementary pairing available with specific NPN types for push-pull configurations.

Single Bipolar Transistors Applications

• Middle power driver circuits
• General-purpose switching applications
• Complementary amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the exact suffix against the manufacturer's official datasheet to confirm pinout compatibility and electrical tolerances. Confirm RoHS3 compliance status for regulatory requirements. Check for obsolescence notices as the component may be designated for non-new designs. Ensure thermal management aligns with the CPT3 package dissipation limits.

Single Bipolar Transistors Selection Notes

Select this component when an 80V PNP transistor with 1A continuous current capability is required in a surface-mount form factor. Consider the complementary NPN counterpart for matched pair performance in linear or switching applications. Evaluate thermal resistance parameters for heat sink design if operating near maximum ratings.

Single Bipolar Transistors Part Context

This part belongs to Rohm's middle power transistor series, optimized for compact PCB layouts. The CPT3 package provides efficient thermal dissipation relative to its footprint. It serves as a standard solution for general-purpose power switching where moderate voltage blocking and current handling are necessary.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the 2DB1182Q-13 from Diodes Incorporated. Similar alternatives include the STD888T4 from STMicroelectronics. Verify pinout and parameter margins before substitution.