2SB1184TLQ

Single Bipolar Transistors Overview

The 2SB1184TLQ is a PNP silicon epitaxial planar power transistor manufactured by ROHM Semiconductor. It features a collector-emitter breakdown voltage (BVCEO) of -50 V and a collector-base breakdown voltage (BVCBO) of -60 V. The device supports a maximum continuous collector current (IC) of -3 A and a collector power dissipation (PC) of 1 W at 25°C ambient temperature, extending to 15 W with adequate heatsinking. Key electrical characteristics include a minimum DC current gain (hFE) of 120 and a typical collector-emitter saturation voltage (VCE(sat)) of -0.5 V at IC/IB = -2A/-0.2A. The component operates within a junction temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for efficient switching performance
• Epitaxial planar structure providing high reliability and robustness
• Designed as a complementary match to the 2SD1760 and 2SD1864 NPN transistors

Single Bipolar Transistors Applications

• General-purpose amplification circuits
• Medium-power switching applications
• Complementary output stages in audio or motor driver circuits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'TLQ' against official ROHM documentation to confirm tape-and-reel packaging specifications and hFE binning classifications. Ensure that the procurement source provides valid RoHS compliance data and confirms the component is suitable for general-use electronic equipment rather than radiation-tolerant or automotive-grade environments.

Single Bipolar Transistors Selection Notes

Select this component when a medium-power PNP transistor with a -50V rating and -3A current capacity is required. Consider its low VCE(sat) characteristic for minimizing conduction losses in switching loads. Verify that the application circuit can accommodate the specified thermal dissipation limits and that the transition frequency meets the operational bandwidth requirements.

Single Bipolar Transistors Part Context

This part belongs to the 2SB1184 series of medium-power transistors from ROHM. It shares structural similarities with the 2SB1182 but offers higher voltage and current ratings (-60V/-3A vs -32V/-2A). The series is designed for general-purpose use in consumer electronics and office automation equipment, serving as a standard discrete semiconductor solution for power control tasks.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SD1760 and 2SD1864 as complementary NPN counterparts. For direct replacement, verify pinout compatibility (Emitter-Collector-Base vs Collector-Emitter-Base) and ensure the substitute matches the -50V/-3A rating profile.