2SB1188-P-TP

Single Bipolar Transistors Overview

The MCC 2SB1188-P-TP is a PNP plastic encapsulated transistor in an SOT-89 package. It features a maximum collector current of -2.0 A, collector-emitter voltage of -32 V, and collector-base voltage of -40 V. Power dissipation is rated at 500 mW with a thermal resistance of 250°C/W. The device operates within a junction temperature range of -55°C to +150°C. Electrical characteristics include a transition frequency of 80 MHz and a DC current gain ranging from 82 to 390 depending on the rank.

Single Bipolar Transistors Feature Summary

• RoHS compliant construction designated by the "P" suffix
• Moisture sensitivity level 1 classification
• Epoxy material meets UL 94 V-0 flammability rating

Single Bipolar Transistors Applications

• General-purpose switching applications
• Amplifier circuits requiring PNP topology
• Power management stages within electronic systems

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank (P, Q, or R) required for the application, as the datasheet defines distinct gain ranges for each marking code. Confirm that the standard tape and reel packaging contains 1000 pieces per reel. Ensure compliance with the manufacturer's life support policy restrictions if the component is intended for critical safety systems.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with high current capability up to 2.0 A is needed in a compact SOT-89 form factor. Consider the thermal resistance of 250°C/W for heat dissipation requirements. Choose the appropriate hFE rank based on the necessary amplification or switching gain specifications for the circuit design.

Single Bipolar Transistors Part Context

This part belongs to the 2SB1188 series manufactured by Micro Commercial Components. The series includes variants distinguished by hFE gain rankings marked as BCQ and BCR, alongside the BCQ marking for the P variant. All variants share identical electrical ratings and physical dimensions, differing only in their specified DC current gain ranges.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the 2SB1188-Q-TP and 2SB1188-R-TP. These parts share the same package and electrical limits but offer different hFE gain ranges. Verify that the alternative rank meets the specific gain requirements of the target circuit.