2SB1188-Q-TP

Single Bipolar Transistors Overview

The MCC 2SB1188-Q-TP is a PNP plastic encapsulated transistor in an SOT-89 package. It features a maximum collector current of -2.0 A, collector-emitter voltage of -32 V, and collector-base voltage of -40 V. DC current gain (hFE) ranges from 120 to 270. Transition frequency is 80 MHz at -0.5 A. Collector power dissipation is 500 mW with thermal resistance of 250°C/W. Operating junction temperature spans -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• Halogen-free green device compliant with environmental standards
• Moisture sensitivity level 1 for reliable storage and handling
• Epoxy meets UL 94 V-0 flammability rating

Single Bipolar Transistors Applications

• General-purpose switching applications
• Amplifier circuits requiring PNP configuration
• Low-power electronic control systems

Single Bipolar Transistors Procurement Notes

Verify the suffix Q indicates the specific hFE bin range of 120 to 270. Confirm the TP suffix denotes tape and reel packaging containing 1000 pieces per reel. Ensure the component matches the SOT-89 physical dimensions provided in the datasheet. Purchase only from authorized distributors to guarantee authenticity and traceability as per manufacturer guidelines.

Single Bipolar Transistors Selection Notes

Select this part when a PNP transistor with up to 2.0 A continuous current is required. The -32 V breakdown voltage suits low-voltage logic interfaces. The Q ranking provides moderate gain suitable for standard amplification tasks. Consider the SOT-89 package for surface mount assembly constraints and thermal management needs within the specified operating temperature range.

Single Bipolar Transistors Part Context

This component belongs to the 2SB1188 series manufactured by Micro Commercial Components. The series includes variants distinguished by hFE rankings: P (82-180), Q (120-270), and R (180-390). All variants share identical electrical ratings and physical characteristics but differ in gain classification for precise circuit matching.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include other PNP transistors in SOT-89 packages with similar voltage and current ratings. Verify that alternative parts meet the -2.0 A collector current and -32 V collector-emitter voltage requirements. Check if the replacement offers comparable transition frequency and thermal resistance for equivalent performance.

Single Bipolar Transistors FAQ

What is the DC current gain range for the 2SB1188-Q variant?

The DC current gain (hFE) for the 2SB1188-Q ranks between 120 and 270.

Does the 2SB1188-Q support high-frequency operation?

Yes, it has a transition frequency (fT) of 80 MHz measured at a collector current of -0.5 A.

What is the maximum collector power dissipation?

The maximum collector power dissipation is 500 mW at 25°C ambient temperature.