2SB1188-R-TP

Single Bipolar Transistors Overview

The 2SB1188-R-TP is a PNP plastic encapsulated transistor from Micro Commercial Components, housed in an SOT-89 package. It features a maximum collector current of -2.0 A and a collector-emitter voltage of -32 V. The device operates within a junction temperature range of -55°C to +150°C and has a collector power dissipation of 500 mW. The 'R' suffix indicates a DC current gain (hFE) ranking of 180 to 390. It is supplied in tape and reel packaging with 1,000 pieces per reel.

Single Bipolar Transistors Feature Summary

• Halogen-free construction compliant with green device standards
• Moisture sensitivity level 1 classification for reliable handling
• Epoxy material meets UL 94 V-0 flammability rating

Single Bipolar Transistors Applications

• General-purpose switching applications
• Amplifier circuits requiring PNP configuration
• Power management modules utilizing low-voltage control

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm the hFE binning category, as the R designation corresponds to a gain range of 180 to 390. Ensure the procurement channel is an authorized distributor to guarantee component authenticity and traceability. Confirm that the tape and reel quantity matches the required production volume, as standard packaging contains 1,000 units per reel.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with a -32 V collector-emitter voltage and -2.0 A continuous current capability is required. The SOT-89 package provides a compact solution with adequate thermal performance for moderate power dissipation. Consider the hFE range of 180 to 390 for circuit biasing stability. Verify that the operating environment stays within the specified -55°C to +150°C junction temperature limits.

Single Bipolar Transistors Part Context

This part belongs to the 2SB1188 series, which includes variants distinguished by their DC current gain rankings. The P, Q, and R suffixes denote different hFE bins, allowing designers to select transistors with specific amplification characteristics without changing the physical package or electrical ratings. This series is designed for general electronic applications requiring reliable PNP switching.

Single Bipolar Transistors Replacement Considerations

Direct substitutes must match the PNP polarity, SOT-89 package, and minimum -32 V VCEO rating. Verify that alternative components meet the -2.0 A ICM requirement and similar hFE ranges if gain consistency is critical. Cross-reference thermal resistance and pinout configurations to ensure compatibility with existing PCB layouts.

Single Bipolar Transistors FAQ

What does the 'R' suffix indicate for the 2SB1188-TP?

The 'R' suffix designates the DC current gain (hFE) ranking, specifically covering a range of 180 to 390 at the specified test conditions.

Is the 2SB1188-TP suitable for high-frequency applications?

The device has a transition frequency (fT) of 80 MHz, making it suitable for moderate-frequency switching and amplification tasks, but not for very high-frequency RF applications.

What is the maximum collector power dissipation?

The maximum collector power dissipation is 500 mW at 25°C ambient temperature, with derating required at higher temperatures.