2SB1189T100Q

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SB1189T100Q is a medium power PNP bipolar junction transistor (BJT) designed for general-purpose switching and amplification. It features an 80V collector-emitter breakdown voltage and supports a continuous collector current of 0.7A. The device utilizes the MPT3 surface-mount package, which corresponds to the SC-62 form factor. Key electrical characteristics include a minimum DC current gain (hFE) of 120 at specified operating conditions and a transition frequency (fT) of 100MHz. The component is rated for a maximum junction temperature of 150°C and operates within a storage temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability with an 80V collector-emitter rating suitable for demanding circuit environments.
• Complements specific NPN transistors in push-pull configurations, facilitating balanced complementary designs.
• Optimized low saturation voltage characteristics to minimize power loss during active conduction states.

Single Bipolar Transistors Applications

• General-purpose switching circuits requiring medium power handling capabilities
• Audio visual equipment signal processing stages
• Office automation equipment driver applications

Single Bipolar Transistors Procurement Notes

Verify the ordering suffix T100 confirms the standard reel packaging quantity of 1000 units per manufacturer specification. Confirm that the MPT3 package designation aligns with your PCB footprint requirements. Ensure compliance with RoHS directives as indicated in the datasheet documentation before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with an 80V rating and 0.7A current capacity is required in a compact SMD form factor. Consider its complementary relationship with the 2SD1767 or 2SD1859 NPN devices if designing matched pairs. Evaluate the thermal dissipation limits based on your specific board layout and ambient operating conditions.

Single Bipolar Transistors Part Context

This part belongs to the 2SB1189 series of medium power transistors manufactured by ROHM Semiconductor. It shares identical electrical specifications with the 2SB1238 model but differs in marking codes and specific packaging variants. The series is engineered for robust performance in consumer electronics and industrial control applications.

Single Bipolar Transistors Replacement Considerations

The 2SB1238 serves as a direct functional substitute with identical pinout and electrical ratings. Verify that the replacement variant matches the required hFE grading and packaging type for your assembly process.

Single Bipolar Transistors FAQ

What is the recommended complementary NPN transistor for this PNP device?

The datasheet specifies the 2SD1767 and 2SD1859 as complementary NPN transistors for use in paired configurations.

What is the maximum collector power dissipation rating?

The absolute maximum rating for collector power dissipation is 0.5W under standard test conditions.

Does this component support radiation-tolerant applications?

No, the product documentation explicitly states that it is not designed to be radiation tolerant.