2SB1204S-E

Single Bipolar Transistors Overview

The 2SB1204S-E is a PNP epitaxial planar silicon bipolar junction transistor (BJT) manufactured by onsemi. It features an 8 A maximum DC collector current and a 50 V collector-emitter voltage rating. The device operates in a TO-251-3 package with a power dissipation of 1 W. Key electrical parameters include a 60 V collector-base voltage, 6 V emitter-base voltage, and a minimum DC current gain (hFE) of 70. It exhibits a transition frequency (fT) of 130 MHz and a collector-emitter saturation voltage of 250 mV. The component supports a maximum operating temperature of +150°C.

Single Bipolar Transistors Feature Summary

• High-current switching capability with 8 A continuous collector current
• Low collector-to-emitter saturation voltage for efficient conduction
• Fast switching speed supported by high transition frequency

Single Bipolar Transistors Applications

• High-current switching applications
• General-purpose amplifier circuits
• Power supply regulation stages

Single Bipolar Transistors Procurement Notes

Verify the obsolescence status before procurement as the manufacturer has scheduled this part for discontinuation. Confirm that the TO-251-3 through-hole package aligns with existing PCB footprints. Ensure the 1 W power dissipation limit meets thermal requirements in the target design. Check for updated replacement components from onsemi to ensure long-term supply chain stability.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring robust PNP switching with moderate voltage ratings. The 50 V breakdown voltage suits low-voltage power systems. Consider the TO-251-3 package constraints for thermal management. Verify that the 130 MHz bandwidth satisfies signal integrity needs. Evaluate alternative BJT families if higher current or voltage ratings are required.

Single Bipolar Transistors Part Context

This component belongs to the 2SB1204 series of PNP transistors. It is designed for general-purpose electronic applications requiring reliable switching performance. The epitaxial planar construction ensures stable operation across varying temperatures. The device complements other discrete semiconductors in power management and control circuitry.

Single Bipolar Transistors Replacement Considerations

Check for direct substitutes within the 2SB1204 family, such as the 2SB1204S-TL-E or 2SB1204T-TL-E, which share similar specifications. Verify pinout compatibility and package dimensions when transitioning to alternative parts.