Single Bipolar Transistors 2SB1215T-TL-E product image

2SB1215T-TL-E

$0.31
  • Description:TRANS PNP 100V 3A TP-FA
  • Series:-

SKU:b6f299779f85 Category: Brand:

  
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2SB1215T-TL-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 100V 3A TP-FA. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SB1215T-TL-E

  • Description:TRANS PNP 100V 3A TP-FA
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):3:00 AM
  • Voltage - Collector Emitter Breakdown (Max):100 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 150mA, 1.5A
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 500mA, 5V
  • Power - Max:1 W
  • Frequency - Transition:130MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package:TP-FA
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SB1215T-TL-E

2SB1215T-TL-E

Single Bipolar Transistors Overview

The onsemi 2SB1215T-TL-E is a PNP bipolar junction transistor rated for 100V collector-emitter voltage and 3A continuous collector current. It utilizes the TP-FA package, equivalent to SC-63 or TO-252, designed for surface-mount applications. The device features a low collector-to-emitter saturation voltage of up to 400mV at 1.5A and a gain-bandwidth product of 180MHz. It supports a maximum junction temperature of 150°C and includes halogen-free compliance.

Single Bipolar Transistors Feature Summary

  • Low collector-to-emitter saturation voltage for efficient switching
  • Excellent linearity of DC current gain (hFE)
  • High transition frequency (fT) enabling fast switching times
  • Halogen-free material composition

Single Bipolar Transistors Applications

  • Relay drivers
  • High-speed inverters
  • Converters
  • General high-current switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'TL' corresponds to the TP-FA reel packaging containing 700 pieces per bag. Confirm that the '-E' designation indicates lead-free status without halogen additives. Ensure the component matches the SC-63/TO-252 footprint dimensions provided in the datasheet outline drawing before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component for circuits requiring robust PNP switching with high current handling capabilities. The low saturation voltage minimizes power dissipation during conduction. Verify that the required hFE rank aligns with the application's base drive requirements. Consider the thermal management needs associated with the 1W dissipation rating at 25°C ambient temperature.

Single Bipolar Transistors Part Context

This part belongs to the 2SB1215 series, which pairs with the complementary NPN 2SD1815 transistor. Both devices share identical electrical characteristics and are designed for use in push-pull configurations or single-ended high-current switching stages within power electronics and signal processing systems.

Single Bipolar Transistors Replacement Considerations

Direct functional substitutes include the 2SB1215S-TL-E and 2SB1215T-H variants from the same manufacturer family. These alternatives share the same electrical ratings but differ in packaging type or environmental compliance attributes.

Single Bipolar Transistors FAQ

What is the maximum collector current pulse rating?

The absolute maximum collector current pulse rating is 6A.

How does the base-to-emitter saturation voltage behave under load?

At a collector current of 1.5A and base current of 0.15A, the base-to-emitter saturation voltage typically ranges between 0.9V and 1.2V.

What is the typical storage time for this transistor?

The typical storage time is 900ns when tested under specified conditions.

2SB1215T-TL-E2SB1215T-TL-E
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