2SB1216S-E

Single Bipolar Transistors Overview

The onsemi 2SB1216S-E is a PNP bipolar junction transistor (BJT) designed for high-current switching applications. It features a maximum collector current of 4 A and a collector-emitter voltage rating of 100 V, with a collector-base voltage of 120 V and an emitter-base voltage of 6 V. The device offers a low collector-emitter saturation voltage of up to 500 mV at 2 A and 130 MHz gain-bandwidth product. It dissipates 1 W of power in the TO-251-3 (IPAK/TP) package and operates at junction temperatures up to +150 °C.

Single Bipolar Transistors Feature Summary

• Low collector-to-emitter saturation voltage for efficient switching
• High transition frequency supporting fast switching times
• Good linearity of DC current gain across operating ranges

Single Bipolar Transistors Applications

• Relay drivers
• High-speed inverters
• Converters
• General high-current switching applications

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized channels as the 2SB1216S-E may be subject to obsolescence notices. Confirm RoHS compliance status via official documentation before integration. Ensure thermal management aligns with the specified 1 W dissipation limit in the IPAK package. Validate that the specific ordering suffix matches the required packaging configuration for your assembly process.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring robust PNP switching capabilities with moderate voltage ratings. The TO-251-3 package provides a balance between thermal performance and board space efficiency. Consider the 130 MHz bandwidth for applications demanding rapid signal transitions. Ensure base drive currents are sufficient to maintain low saturation voltages during high-load conditions.

Single Bipolar Transistors Part Context

This part belongs to the 2SB1216 series, which pairs with the NPN 2SD1816 transistor. Both devices share similar electrical characteristics and are intended for complementary use in push-pull configurations or single-ended switching stages. The series is engineered for general-purpose high-current applications within consumer and industrial electronics.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the 2SB1216S-H variant, which shares identical electrical specifications but differs in halogen-free packaging requirements. Verify pinout compatibility and thermal resistance values when transitioning between different package styles within the same series.

Single Bipolar Transistors FAQ

What is the maximum collector current for the 2SB1216S-E?

The maximum continuous collector current is 4 A.

Does the 2SB1216S-E support surface mount mounting?

Yes, it is available in the DPAK/TP-FA package (ordering suffix -TL-E) for surface mount applications, though the S-E suffix typically denotes the IPAK/TP through-hole package.

What is the typical turn-on time for this transistor?

The typical turn-on time is 100 ns under specified test conditions.