2SB1216T-TL-H

Single Bipolar Transistors Overview

The onsemi 2SB1216T-TL-E is a PNP bipolar junction transistor designed for high-current switching applications. It features a TP-FA surface-mount package with four pins and dimensions of 6.5 x 5.5 x 2.3 mm. The device supports a maximum DC collector current of 4 A and a collector-emitter voltage of 100 V. Additional electrical ratings include a collector-base voltage of -120 V, an emitter-base voltage of -6 V, and a maximum power dissipation of 20 W. It operates at frequencies up to 1 MHz with a maximum junction temperature of +150 °C.

Single Bipolar Transistors Feature Summary

• Low collector-to-emitter saturation voltage for efficient switching
• Small and slim package facilitating compact circuit design
• High transition frequency (fT) for fast switching performance
• Good linearity of hFE for stable amplification

Single Bipolar Transistors Applications

• Relay drivers
• High-speed inverters
• Converters
• General high-current switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific suffix against official datasheets, as variations such as TL-E or T-L-H may indicate different tape-and-reel configurations or regional distribution channels. Confirm RoHS compliance status and moisture sensitivity level prior to integration. Ensure the supplier provides traceable documentation matching the manufacturer's part identification to avoid counterfeit components.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring robust PNP switching with moderate voltage handling. The TP-FA package offers thermal advantages over smaller SOT packages but requires adequate PCB copper area for heat dissipation. Compare fT and saturation voltage requirements against alternative transistors in the same family to ensure optimal performance for the specific load conditions.

Single Bipolar Transistors Part Context

This transistor belongs to onsemi's general-purpose high-current switching lineup. It shares functional similarities with other PNP devices in the series, offering a balance between current capacity and switching speed. The device is engineered to replace older through-hole counterparts in modern surface-mount assembly processes.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.