2SB1218ARL

Single Bipolar Transistors Overview

The Panasonic 2SB1218ARL is a silicon PNP epitaxial planar transistor designed for general amplification. It features a collector-emitter voltage of -45 V and a continuous collector current of -100 mA, with a peak collector current rating of -200 mA. The device dissipates up to 150 mW at 25°C ambient temperature and operates within a junction temperature range of -55°C to +150°C. It utilizes an S-Mini3-G1 (SC-70) surface-mount package. Electrical characteristics include a transition frequency of 80 MHz and a forward current transfer ratio ranging from 160 to 460 depending on the rank.

Single Bipolar Transistors Feature Summary

• High forward current transfer ratio hFE
• S-Mini type package allowing downsizing of equipment
• Supports automatic insertion through tape packing and magazine packing

Single Bipolar Transistors Applications

• General amplification circuits
• Office equipment
• Communications equipment
• Measuring instruments
• Household appliances

Single Bipolar Transistors Procurement Notes

Verify the exact ordering suffix against official Panasonic documentation to confirm specific binning or packaging variations. Confirm compliance status with the latest RoHS Directive requirements. Check the manufacturer's website for current lifecycle stage information, as this component may be subject to planned maintenance or discontinuation schedules.

Single Bipolar Transistors Selection Notes

Select this component for low-power general amplification tasks requiring a compact footprint. Ensure the design accommodates the 150 mW power dissipation limit and the -45 V maximum voltage ratings. Verify that the required hFE gain falls within the available rank classifications (Q, R, S, or No-rank). Consider thermal management strategies if operating near the upper limits of the junction temperature range.

Single Bipolar Transistors Part Context

This component belongs to the Panasonic 2SB1218A series of silicon PNP transistors. It serves as the complementary counterpart to the 2SD1819A NPN transistor. The series is engineered for standard applications in consumer electronics and industrial control systems where small form factors and reliable amplification are necessary.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SD1819A as the complementary NPN transistor. For direct replacement, verify pinout compatibility and ensure the substitute part meets or exceeds the -45 V voltage and -100 mA current specifications.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) is rated at -45 V.

Does this transistor support automated assembly?

Yes, the S-Mini package allows for automatic insertion via tape packing and magazine packing.

What is the typical forward current transfer ratio?

The forward current transfer ratio (hFE) ranges from 160 to 460, classified into ranks Q, R, S, or No-rank.