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2SB1234-TB-E-SY is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Sanyo. Its product description is PNP EPITAXIAL PLANAR SILICON. Review the specifications below when checking this part for your BOM.
The 2SB1234-TB-E-SY is a PNP epitaxial planar silicon transistor manufactured by Sanyo. It features a maximum DC collector current of 50 mA and a collector-emitter voltage rating of -12 V. The device has a maximum power dissipation of 250 mW and a collector-base voltage of -15 V. Its emitter-base voltage is rated at -3 V, with a maximum operating frequency of 750 MHz. The component utilizes a CP package with dimensions of 2.9 x 1.5 x 1.1 mm and supports a junction temperature up to +150 °C.
Verify the manufacturer origin carefully, as sourcing data indicates potential unbranded or Chinese origin listings alongside official Sanyo/ON Semiconductor documentation. Confirm the specific suffix '-TB-E-SY' matches the required tape-and-box packaging format. Ensure the component aligns with the specified CP package dimensions and electrical ratings before integration into final designs.
Select this component for low-power switching and amplification tasks requiring a PNP configuration. The 50 mA current limit and 250 mW power dissipation define its operational boundaries. Consider the 750 MHz frequency capability for signal processing needs. The small CP package size suits space-constrained PCB layouts where through-hole alternatives are unsuitable.
This part belongs to the Sanyo single bipolar transistor family, specifically utilizing epitaxial planar silicon technology. It is often associated with ON Semiconductor distribution channels following corporate acquisitions. The TB suffix typically denotes tape-and-box packaging, distinguishing it from bulk or other reel formats within the same product line.
Public confirmed substitute part numbers are not available in the provided source material.
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