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2SB1234-TB-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is PNP EPITAXIAL PLANAR SILICON. Review the specifications below when checking this part for your BOM.
The onsemi 2SB1234-TB-E is a PNP epitaxial planar silicon bipolar junction transistor (BJT) designed for surface-mount applications. It features a maximum collector-emitter voltage of 50V and a continuous collector current rating of 200mA. The device offers a minimum DC current gain (hFE) of 5000 at a test condition of 10mA and 2V. It operates within a temperature range of -55°C to 150°C, ensuring reliability in demanding environments.
Verify the specific suffix 'TB-E' against official onsemi documentation to confirm tape-and-reel packaging specifications. Ensure the component matches the required PNP configuration and electrical ratings for your circuit design. Cross-reference with authorized distributors to validate authenticity and traceability. Confirm that the operating temperature range aligns with your system's thermal requirements.
Select this component when high current gain is critical for low-level signal processing or switching applications. The 50V VCE rating suits low-voltage power management tasks. Consider the SMD form factor for space-constrained PCB layouts. Validate that the 200mA current limit meets the load requirements without exceeding thermal dissipation limits under worst-case conditions.
This part belongs to onsemi's portfolio of single bipolar transistors, specifically PNP types. It complements other discrete semiconductor solutions used in intelligent power and sensing technologies. The device supports industrial and commercial applications requiring reliable switching and amplification functions within compact electronic assemblies.
Public confirmed substitute part numbers are not available in the provided source material.
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