2SB1240TV2Q

Single Bipolar Transistors Overview

The 2SB1240TV2Q is a PNP silicon epitaxial planar transistor manufactured by ROHM. It features a collector-emitter breakdown voltage of -32V and a maximum DC collector current of -2A. The device provides a minimum DC current gain (hFE) of 120, with transition frequencies reaching 100MHz. It utilizes the ATV package format and offers low saturation voltage characteristics.

Single Bipolar Transistors Feature Summary

• Epitaxial planar construction for stable performance
• Low collector-emitter saturation voltage
• Complements NPN transistors 2SD1758 and 2SD1862

Single Bipolar Transistors Applications

• General-purpose switching circuits
• Audio visual equipment
• Office automation equipment
• Communication devices

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm the ATV package type and hFE classification. Ensure the component meets RoHS compliance standards required for your assembly process. Confirm that the product status allows for new design inclusion as per manufacturer guidelines.

Single Bipolar Transistors Selection Notes

Select this component when a medium-power PNP transistor with high current handling capability is required. Consider its complementary relationship with specific NPN models for push-pull configurations. Evaluate thermal management requirements based on the specified power dissipation limits in the datasheet.

Single Bipolar Transistors Part Context

This part belongs to the 2SB1182/2SB1240 series of medium power transistors from ROHM. The series is designed for general-use electronic equipment requiring reliable switching and amplification functions within standard operating temperature ranges.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the 2DB1182Q-13 from Diodes Incorporated. Similar alternatives are available from STMicroelectronics such as the STD888T4.