Single Bipolar Transistors 2SB1260T100Q product image

2SB1260T100Q

$0.70
  • Description:TRANS PNP 80V 1A MPT3
  • Series:-

SKU:1aa6bb17cb4f Category: Brand:

  
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2SB1260T100Q is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS PNP 80V 1A MPT3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SB1260T100Q

  • Description:TRANS PNP 80V 1A MPT3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 100mA, 3V
  • Power - Max:2 W
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-243AA
  • Supplier Device Package:MPT3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SB1260T100Q

2SB1260T100Q

Single Bipolar Transistors Overview

The 2SB1260T100Q is a single PNP bipolar junction transistor manufactured by ROHM Semiconductor. It features an 80 V collector-emitter voltage rating and a maximum continuous collector current of -1 A. The device operates with a power dissipation capacity of 2 W and exhibits a transition frequency of 100 MHz. Key electrical characteristics include a DC current gain (hFE) ranging from 82 to 390, a collector-emitter saturation voltage of 400 mV, and a maximum operating temperature of +150 °C. It utilizes the MPT3 surface-mount package.

Single Bipolar Transistors Feature Summary

  • Designed for middle power driver applications requiring high reliability.
  • Features low collector-emitter saturation voltage for efficient switching.
  • Constructed using silicon technology for stable performance.

Single Bipolar Transistors Applications

  • Middle power driver circuits
  • General-purpose switching applications

Single Bipolar Transistors Procurement Notes

Verify component status before procurement as this part may be marked as Not Recommended for New Designs (NRND). Confirm availability through authorized distributors, noting that stock levels can fluctuate. Ensure compliance with RoHS directives and check for specific REACH SVHC declarations relevant to your region. Validate that the MPT3 package matches your PCB footprint requirements.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with 80 V breakdown and 1 A current handling is required in a compact SMD form factor. Consider its complementary NPN types, such as the 2SD1898 or 2SD1733, if paired operation is needed. Evaluate the 2 W power dissipation limit against thermal management constraints in the final assembly.

Single Bipolar Transistors Part Context

This component belongs to the 2SB1260 series of middle power transistors from ROHM. It shares design similarities with the 2SB1181 but offers specific electrical characteristics tailored for robust driver stages. The MPT3 package provides a balance between thermal performance and space efficiency for surface-mount implementations.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult official ROHM resources for potential obsolescence management strategies given the NRND status.

2SB1260T100Q2SB1260T100Q
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