Single Bipolar Transistors 2SB12990P product image

2SB12990P

  • Description:TRANS PNP 60V 3A TO-220F-A1
  • Series:-

SKU:74708e5a601c Category: Brand:

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2SB12990P is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is TRANS PNP 60V 3A TO-220F-A1. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SB12990P

  • Description:TRANS PNP 60V 3A TO-220F-A1
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):3:00 AM
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 2A
  • Current - Collector Cutoff (Max):100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:400 @ 500mA, 4V
  • Power - Max:2 W
  • Frequency - Transition:30MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220F-A1
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SB12990P

2SB12990P

Single Bipolar Transistors Overview

The Panasonic 2SB12990P is a silicon PNP epitaxial planar power transistor designed for power amplification. It features a TO-220F-A1 full-pack package suitable for heat sink mounting with a single screw. The device supports a collector current of -3A and a collector-emitter voltage of -60V. Key electrical characteristics include a transition frequency of 30MHz, a collector-emitter saturation voltage of -1V at -2A/-50mA, and a forward current transfer ratio (hFE) ranging from 300 to 700 depending on the rank.

Single Bipolar Transistors Feature Summary

  • High forward current transfer ratio hFE
  • Satisfactory linearity of forward current transfer ratio hFE
  • Full-pack package which can be installed to the heat sink with one screw

Single Bipolar Transistors Applications

  • Power amplification circuits
  • General electronic equipment
  • Office equipment
  • Communications equipment
  • Measuring instruments

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank (Q or P) required for your design against the datasheet specifications. Confirm the latest product status via official channels as maintenance or discontinuation plans may apply. Ensure compliance with RoHS directives if applicable to your manufacturing process. Always consult the most recent Product Standards before finalizing designs or purchasing.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high current gain and linear amplification in a through-hole package. Consider the thermal resistance characteristics when designing heat dissipation solutions. Verify that the operating conditions remain within the absolute maximum ratings to prevent device failure. Evaluate the hFE rank requirements based on the specific circuit gain needs.

Single Bipolar Transistors Part Context

The 2SB12990P belongs to the 2SB1299 series of silicon PNP transistors manufactured by Panasonic Electronic Components. It utilizes an epitaxial planar structure optimized for power amplification tasks. The component is housed in a TO-220F-A1 package, providing robust mechanical stability and efficient thermal management capabilities for industrial and commercial electronics.

Single Bipolar Transistors Replacement Considerations

Consult official Panasonic documentation for verified substitute part numbers. Cross-referencing with generic equivalents requires careful validation of pinout, voltage ratings, and thermal characteristics to ensure compatibility.

2SB12990P2SB12990P

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