Single Bipolar Transistors 2SB1308-R-TP product image

2SB1308-R-TP

  • Description:TRANS PNP 20V 3A SOT-89
  • Series:-

SKU:e9d3d21d875a Category: Brand:

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2SB1308-R-TP is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is TRANS PNP 20V 3A SOT-89. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SB1308-R-TP

  • Description:TRANS PNP 20V 3A SOT-89
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Tape & Reel (TR)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):3:00 AM
  • Voltage - Collector Emitter Breakdown (Max):20 V
  • Vce Saturation (Max) @ Ib, Ic:450mV @ 150mA, 1.5A
  • Current - Collector Cutoff (Max):500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:180 @ 500mA, 2V
  • Power - Max:500 mW
  • Frequency - Transition:50MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-243AA
  • Supplier Device Package:SOT-89
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SB1308-R-TP

2SB1308-R-TP

Single Bipolar Transistors Overview

The MCC 2SB1308-R-TP is a PNP plastic-encapsulated transistor housed in an SOT-89 package. It features a collector current (ICM) of -3A and power dissipation (PCM) of 0.5W at 25°C. Key electrical limits include a collector-base voltage (VCBO) of -30V, collector-emitter voltage (VCEO) of -20V, and emitter-base voltage (VEBO) of -6.0V. The DC current gain (hFE) ranges from 180 to 390 for the 'R' rank. Transition frequency (fT) is 50 MHz, with saturation voltage (VCE(sat)) max -0.45V.

Single Bipolar Transistors Feature Summary

  • High collector current capability of -3A
  • SOT-89 surface-mount packaging
  • RoHS compliant and halogen-free options available

Single Bipolar Transistors Applications

  • General-purpose switching applications
  • Amplifier circuits requiring PNP topology
  • Power management modules

Single Bipolar Transistors Procurement Notes

Verify the specific suffix '-R' to confirm the hFE binning range of 180-390. Ensure the '-TP' designation matches the required tape-and-reel quantity of 1K pcs per reel. Confirm RoHS compliance status if environmental regulations apply to the final assembly.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with -3A continuous current handling is required in a compact SOT-89 footprint. The -R ranking provides higher gain consistency compared to lower bins. Verify thermal constraints as power dissipation is rated at 0.5W at 25°C ambient temperature.

Single Bipolar Transistors Part Context

This device belongs to the 2SB1308 series of PNP transistors manufactured by Micro Commercial Components. The series includes variants with different hFE rankings (P, Q, R) and packaging options. The SOT-89 form factor allows for efficient PCB space utilization while maintaining robust current handling capabilities for general electronic designs.

Single Bipolar Transistors Replacement Considerations

Direct substitutes within the same series include 2SB1308-P and 2SB1308-Q, differing primarily in hFE gain ranges. Cross-manufacturer replacements must match the -3A ICM, -30V VCBO, and SOT-89 package dimensions.

Single Bipolar Transistors FAQ

What is the DC current gain range for the 2SB1308-R variant?

The DC current gain (hFE) for the 2SB1308-R rank ranges from 180 to 390.

Is the 2SB1308-TP available in halogen-free versions?

Yes, halogen-free versions are available by adding the '-HF' suffix to the part number.

What is the maximum collector-base voltage?

The maximum collector-base voltage (VCBO) is -30V.

2SB1308-R-TP2SB1308-R-TP

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