2SB1321A0A

Single Bipolar Transistors Overview

The Panasonic 2SB1321A0A is a silicon PNP epitaxial planar transistor designed for low-frequency output and driver amplification. It features a collector-emitter voltage of -50 V, a maximum collector current of -0.5 A, and a peak collector current of -1 A. The device provides a collector power dissipation of 600 mW at 25°C and operates up to a junction temperature of 150°C. Its transition frequency reaches 200 MHz, with a forward current transfer ratio (hFE) ranging from 85 to 340 depending on the rank classification.

Single Bipolar Transistors Feature Summary

• Designed specifically for low-frequency output amplification and driver amplification applications
• Supports radial taping supply methods for automated assembly processes
• Offers large collector power dissipation capability of 600 mW

Single Bipolar Transistors Applications

• Low-frequency output amplification circuits
• Driver amplification stages
• General electronic equipment such as office equipment and measuring instruments

Single Bipolar Transistors Procurement Notes

Verify component status carefully as this product is classified under maintenance or discontinued categories by the manufacturer. Confirm availability through official Panasonic channels before finalizing design specifications. Ensure compliance with export control regulations if applicable. Request the latest Product Standards directly from sales staff to validate current specifications prior to purchasing.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with a 50V rating and 0.5A continuous current capacity is required. Consider its complementary relationship with the 2SD1992A NPN transistor for matched circuit designs. Evaluate the MT-1-A1 package dimensions against available board space constraints. Verify that the 600mW power dissipation meets thermal requirements without excessive heatsinking.

Single Bipolar Transistors Part Context

This component belongs to the Panasonic 2SB1321 series of small-signal bipolar transistors. It utilizes a silicon PNP epitaxial planar structure housed in an MT-1-A1 three-pin package. The device is intended for standard commercial applications rather than specialized automotive or aerospace environments requiring exceptional reliability.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SD1992A as the complementary NPN transistor for paired circuit designs. No other direct substitute part numbers are documented in the provided source material.