2SB1366F-Y-BP

Single Bipolar Transistors Overview

The MCC 2SB1366F-Y-BP is a PNP silicon power transistor housed in a TO-220F package. It features a collector-emitter voltage of -60 V and a collector current rating of -3.0 A. The device provides a maximum collector power dissipation of 2.0 W at 25°C. Electrical characteristics include a forward current transfer ratio (hFE) ranging from 100 to 200 for the Y grade, with a transition frequency of 9.0 MHz. The component operates within a junction temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• PNP silicon construction designed for general-purpose power switching applications
• Epoxy encapsulation meets UL 94 V-0 flammability rating requirements
• Lead-free finish compliant with RoHS directives

Single Bipolar Transistors Applications

• General-purpose power switching circuits
• Low-frequency amplifier stages
• Driver circuits requiring moderate current handling

Single Bipolar Transistors Procurement Notes

Verify that the ordering suffix matches the required hFE binning specifications. Confirm the presence of the BP suffix indicates bulk packaging containing 5,000 pieces per box. Ensure the procurement documentation explicitly states compliance with RoHS standards. Check for the HF suffix if halogen-free material certification is mandatory for the specific assembly process.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with a -60 V collector-emitter voltage and -3.0 A continuous current capability is required. The TO-220F package facilitates mounting on heat sinks for thermal management. Verify that the application circuit can accommodate the specified saturation voltages and leakage currents under maximum operating temperatures.

Single Bipolar Transistors Part Context

This part belongs to the Micro Commercial Components discrete semiconductor product line. It is manufactured as a standard plastic-encapsulated transistor utilizing silicon planar technology. The device is intended for use in commercial and industrial electronic equipment where reliable power switching performance is necessary.

Single Bipolar Transistors Replacement Considerations

The datasheet specifies that the 'O' suffix variant offers an hFE range of 60 to 120, whereas the 'Y' suffix provides a range of 100 to 200. Substitution between these variants requires verification that the target circuit tolerates the difference in current gain specifications.