2SB1386-Q-TP

Single Bipolar Transistors Overview

The MCC 2SB1386-Q-TP is a PNP silicon epitaxial transistor housed in an SOT-89 package. It features a collector-emitter voltage of -20 V, a collector-base voltage of -30 V, and an emitter-base breakdown voltage of -6 V. The device supports a continuous collector current of -500 mA and a pulsed collector current of -10 A, with a maximum power dissipation of 500 mW. The DC current gain (hFE) for the Q rank ranges from 120 to 270 at IC = -50 mA and VCE = -2 V. Transition frequency is specified at 120 MHz.

Single Bipolar Transistors Feature Summary

• Low collector saturation voltage
• Excellent current-to-gain characteristics
• Halogen-free green device compliant with environmental standards

Single Bipolar Transistors Applications

• General-purpose switching applications
• Low-frequency amplifier circuits
• Driver stages requiring high current gain

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'Q' to ensure the correct hFE binning range of 120 to 270 is obtained, as other ranks like P or R offer different gain specifications. Confirm the '-TP' designation indicates tape-and-reel packaging containing 1000 pieces per reel. Ensure sourcing channels are authorized distributors to guarantee component authenticity and traceability.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with a -20 V collector-emitter rating and moderate current handling capability is required. The Q ranking provides a balanced gain profile suitable for standard amplification tasks. Consider the thermal resistance of 250°C/W junction-to-ambient when designing heat dissipation strategies for surface-mount implementations.

Single Bipolar Transistors Part Context

This part belongs to the 2SB1386 series manufactured by Micro Commercial Components. The series includes variants distinguished by their DC current gain rankings: P (82-180), Q (120-270), and R (180-390). All variants share identical electrical ratings and physical dimensions but differ in gain classification and marking codes (BHP, BHQ, BHR respectively).

Single Bipolar Transistors Replacement Considerations

Direct substitutes within the same family include the 2SB1386-P-TP and 2SB1386-R-TP, provided the specific DC current gain requirements align with their respective ranking ranges.