Single Bipolar Transistors 2SB1386T100Q product image

2SB1386T100Q

$0.83
  • Description:TRANS PNP 20V 5A MPT3
  • Series:-

SKU:ed8f62df2f43 Category: Brand:

  
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2SB1386T100Q is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS PNP 20V 5A MPT3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SB1386T100Q

  • Description:TRANS PNP 20V 5A MPT3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):5:00 AM
  • Voltage - Collector Emitter Breakdown (Max):20 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 100mA, 4A
  • Current - Collector Cutoff (Max):500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 500mA, 2V
  • Power - Max:2 W
  • Frequency - Transition:120MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-243AA
  • Supplier Device Package:MPT3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SB1386T100Q

2SB1386T100Q

Single Bipolar Transistors Overview

The ROHM 2SB1386T100Q is a PNP epitaxial planar silicon transistor designed for low-frequency applications. It features a collector-emitter voltage of -20V and a continuous collector current of -5A. The device exhibits excellent DC current gain characteristics with an hFE range of 82 to 390, depending on the specific suffix classification. It achieves a typical collector-emitter saturation voltage of -0.35V at high drive currents. The component is housed in an MPT3 (SC-62) surface-mount package.

Single Bipolar Transistors Feature Summary

  • Low collector-emitter saturation voltage for efficient switching
  • High DC current gain across varying operating conditions
  • Complements NPN transistors such as the 2SD2098 and 2SD2118

Single Bipolar Transistors Applications

  • General-purpose low-frequency switching circuits
  • Driver stages for power amplifiers
  • Complementary pairs in linear and switching applications

Single Bipolar Transistors Procurement Notes

Verify the exact hFE binning code (P, Q, or R) required for your design, as these suffixes dictate the minimum and maximum DC current gain ranges. Confirm that the MPT3 package dimensions align with your PCB footprint. Ensure the selected variant meets the thermal dissipation requirements for your specific ambient temperature and mounting conditions.

Single Bipolar Transistors Selection Notes

Select this component when a robust PNP transistor with high current handling capability (-5A) and low saturation voltage is needed. It serves as a direct complement to specific NPN devices like the 2SD2097 and 2SD2118. Consider the hFE classification carefully to ensure consistent gain performance in your circuit design without requiring excessive base drive current.

Single Bipolar Transistors Part Context

This part belongs to the 2SB1386 series, which includes variants like the 2SB1412 and 2SB1326. These transistors share similar electrical profiles but may differ in packaging or specific gain classifications. The T100 suffix indicates taping packaging with a basic ordering unit of 1000 pieces. The device is manufactured using an epitaxial planar process on silicon substrate.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly lists the 2SD2098, 2SD2118, and 2SD2097 as complementary NPN counterparts. No direct PNP replacements are listed in the provided documentation. Verify pinout compatibility if substituting with other SOT-89 style packages.

2SB1386T100Q2SB1386T100Q
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