2SB1427W6_R1_00001

Single Bipolar Transistors Overview

The Panjit 2SB1427W6 is a PNP low Vce(sat) transistor featuring a silicon epitaxial structure housed in an SOT-23 6L-1 package. It supports a collector current of -3A and withstands collector-emitter voltages up to -20V. The device ensures high efficiency with a maximum saturation voltage of -200mV at Ic/Ib=-1.6A/-53mA. DC current gain ranges from 100 to 500 depending on the operating current. Transition frequency reaches 160MHz, while power dissipation is rated at 1.2W.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for enhanced switching efficiency
• High collector current capability suitable for demanding loads
• Excellent DC current gain characteristics across various operating points
• Lead-free construction compliant with EU RoHS 2.0 directives

Single Bipolar Transistors Applications

• General-purpose switching applications
• Driver circuits requiring high current handling
• Power management modules utilizing low saturation profiles

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Panjit documentation to confirm packaging details such as reel size or tape specifications. Ensure compliance requirements match project standards, particularly regarding halogen-free status and environmental directives. Confirm thermal resistance parameters align with the intended PCB mounting conditions before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when low saturation voltage is critical for minimizing power loss during conduction phases. The SOT-23 6L-1 package offers a compact footprint for space-constrained designs. Evaluate the transition frequency and current gain curves to ensure adequate performance margins for the target switching speed and load requirements within the specified temperature range.

Single Bipolar Transistors Part Context

This part belongs to the 2SB1427 series of PNP transistors manufactured by Panjit International Inc. It shares the same core electrical profile and physical package dimensions as the 2SB1429 model but may differ in specific marking codes or minor manufacturing revisions. Both components utilize the SOT-23 6L-1 form factor designed for surface-mount assembly processes.

Single Bipolar Transistors Replacement Considerations

The 2SB1429_R1_00001 serves as a verified substitute within the same product family. Verify that the replacement maintains identical pinout configurations and meets all maximum rating thresholds required by the original circuit design.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter saturation voltage?

The maximum Vce(sat) is -200mV when tested at a collector current of -1.6A and a base current of -53mA.

Does the device comply with environmental regulations?

Yes, the transistor is lead-free and complies with EU RoHS 2.0 directives, utilizing green molding compound per IEC 61249 standards.

What is the typical transition frequency?

The typical transition frequency (fT) is 160MHz under test conditions of Vce=-2V and Ie=0.5A.