2SB157400L

Single Bipolar Transistors Overview

The Panasonic 2SB1574 is a silicon PNP epitaxial planar power transistor designed for low-frequency output amplification. It features a U-G2 package allowing direct solder radiation fin attachment to the printed circuit board. Key electrical ratings include a collector-base voltage (VCBO) of -50 V, a collector-emitter voltage (VCEO) of -50 V, and a continuous collector current (IC) of -2 A. The device supports a peak collector current of -3 A and offers a collector power dissipation of 10 W at 25°C case temperature. Transition frequency (fT) is rated at 80 MHz.

Single Bipolar Transistors Feature Summary

• Designed with universal characteristics suitable for general-purpose low-frequency output amplification applications.
• Features a high collector-base voltage rating of -50 V and a high collector-emitter voltage rating of -50 V.
• Supports large collector current handling capabilities up to -2 A continuous and -3 A peak.
• Package design enables direct soldering of the radiation fin to the printed circuit board for thermal management.

Single Bipolar Transistors Applications

• Low-frequency output amplification circuits
• General electronic equipment such as office equipment and household appliances
• Communications equipment signal processing
• Measuring instruments

Single Bipolar Transistors Procurement Notes

Verify the current lifecycle status on the official Panasonic semiconductor website before procurement, as the datasheet indicates potential maintenance or discontinuation stages. Confirm that the application aligns with standard general electronic equipment usage, as special applications requiring exceptional reliability are excluded from standard warranties. Ensure compliance with RoHS Directive requirements during integration.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a PNP power transistor with a -50 V voltage rating and -2 A current capacity. Consider the U-G2 package for its thermal dissipation advantages via direct PCB mounting. Verify that the required hFE gain falls within the specified ranks (R or S) for the intended operating conditions. Ensure the operating environment remains within the guaranteed junction temperature range of -55°C to +150°C.

Single Bipolar Transistors Part Context

This component belongs to the category of silicon PNP epitaxial planar transistors manufactured by Panasonic Electronic Components. It is engineered specifically for low-frequency output amplification tasks in consumer and industrial electronics. The product complies with the RoHS Directive (EU 2002/95/EC), ensuring adherence to environmental standards for restricted hazardous substances in electrical and electronic equipment.

Single Bipolar Transistors Replacement Considerations

Consult the official Panasonic Industry website for the most up-to-date Product Standards and replacement recommendations. No specific substitute part numbers are documented in the provided datasheet. Designers should verify if newer series have replaced this model due to the noted maintenance or discontinuation statuses.

Single Bipolar Transistors FAQ

What is the maximum collector power dissipation for the 2SB1574?

The maximum collector power dissipation is 10 W when the case temperature (TC) is maintained at 25°C.

Can the 2SB1574 be used in aerospace or life support systems?

No, the datasheet explicitly states that the product is not recommended for special applications such as aerospace, traffic control, or life support systems where failure may jeopardize human life.

How is the transition frequency (fT) defined for this transistor?

The transition frequency is measured under conditions of VCE = -10 V, IC = -50 mA, and f = 200 MHz, with a typical value of 80 MHz.