Single Bipolar Transistors 2SB1689T106 product image

2SB1689T106

$0.53
  • Description:TRANS PNP 12V 1.5A UMT3
  • Series:-

SKU:d76ec08920e5 Category: Brand:

  
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2SB1689T106 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS PNP 12V 1.5A UMT3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SB1689T106

  • Description:TRANS PNP 12V 1.5A UMT3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):1.5 A
  • Voltage - Collector Emitter Breakdown (Max):12 V
  • Vce Saturation (Max) @ Ib, Ic:200mV @ 25mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:270 @ 200mA, 2V
  • Power - Max:200 mW
  • Frequency - Transition:400MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:UMT3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SB1689T106

2SB1689T106

Single Bipolar Transistors Overview

The 2SB1689T106 is a small signal PNP silicon bipolar junction transistor manufactured by ROHM Semiconductor. It features a single-element configuration housed in an SC-70 (SOT-323) surface-mount package with three terminals. The device supports a maximum collector current of 1.5 A and a collector-emitter breakdown voltage of 12 V. Key electrical parameters include a minimum DC current gain (hFE) of 270. It operates within a temperature range of -55 °C to +150 °C junction temperature and complies with RoHS standards.

Single Bipolar Transistors Feature Summary

  • PNP polarity configuration for complementary circuit applications
  • High collector current capability of 1.5 A
  • Compact SC-70 surface-mount footprint
  • High DC current gain starting at 270

Single Bipolar Transistors Applications

  • General-purpose switching circuits
  • Complementary amplifier stages
  • Low-voltage signal processing

Single Bipolar Transistors Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with ROHM Semiconductor or authorized distributors before integration. Confirm that the SC-70 package dimensions align with your PCB layout constraints. Ensure thermal management strategies account for the specified power dissipation limits under actual operating conditions.

Single Bipolar Transistors Selection Notes

Select this component when a high-current PNP transistor is required in a minimal footprint. The 12 V rating suits low-voltage logic interfaces. Compare against NPN counterparts like the 2SD series for complementary designs. Verify hFE binning requirements if precise gain matching is necessary for the target application performance.

Single Bipolar Transistors Part Context

This part belongs to ROHM's small-signal BJT portfolio, designed for general electronic equipment. The SC-70 package allows for automated surface-mount assembly, supporting high-volume manufacturing. It serves as a standard discrete solution for amplification and switching tasks where space efficiency and moderate current handling are prioritized.

Single Bipolar Transistors Replacement Considerations

Cross-reference with other PNP transistors in the SC-70 package offering similar 1.5 A current ratings and 12 V breakdown voltages. Verify pinout compatibility and thermal characteristics before substitution.

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