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Product Detailed Parameters
- Description：MOSFET N-CH
- Series：*
- Mfr：Sanyo
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The 2SB808F-SPA is a dual-gate N-channel silicon MOSFET array manufactured by Sanyo. It belongs to the 2SB808 base product family, designed for low-voltage large-current amplifier applications. The component utilizes an SPAK package and is classified as a FET or MOSFET array. Official documentation identifies it as a PNP/NPN epitaxial planar silicon transistor variant within the broader series context, though specific listings describe it as N-channel silicon with dual gate configuration.
Feature Summary
- Dual-gate N-channel silicon architecture
- Designed for low-voltage large-current amplifier applications
- Epitaxial planar silicon construction
Applications
- Low-voltage large-current amplifier circuits
- General-purpose switching applications
- Electronic circuit arrays
Procurement Notes
Verify part status carefully as multiple sources list the 2SB808F-SPA as obsolete or discontinued. Confirm manufacturer lineage, as some records attribute production to AMI Semiconductor or ON Semiconductor following corporate acquisitions. Ensure compatibility with existing designs before procurement due to potential supply chain changes.
Selection Notes
Select this component for applications requiring dual-gate N-channel MOSFET functionality in low-voltage environments. Consider the SPAK package constraints for thermal management and board space. Verify if the PNP/NPN characteristics of the base 2B808 series align with specific circuit requirements, as datasheet descriptions vary between BJT and MOSFET classifications.
Part Context
This component is part of the 2SB808 series, originally manufactured by Sanyo Semicon Device. The series is characterized by epitaxial planar silicon transistors intended for amplifier applications. The 2SB808F-SPA specifically denotes the dual-gate N-channel variant within this lineup, often associated with legacy semiconductor portfolios now managed by other entities.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided data. Due to the obsolete status indicated by multiple distributors, direct replacements should be sought through current manufacturer catalogs or equivalent dual-gate N-channel MOSFET arrays with compatible voltage and current ratings.
