2SC2235-Y(T6CANOFM

Single Bipolar Transistors Overview

The Toshiba 2SC2235 is a silicon NPN epitaxial planar transistor manufactured using the PCT process. It features a maximum collector-emitter voltage of 120 V and a continuous collector current rating of 800 mA. The device dissipates up to 900 mW at 25°C ambient temperature, with a junction temperature limit of 150°C. Electrical characteristics include a minimum DC current gain (hFE) of 80 at 100 mA and a typical transition frequency of 120 MHz. It is housed in a JEDEC TO-92MOD package.

Single Bipolar Transistors Feature Summary

• Complementary pairing with the 2SA965 PNP transistor for push-pull configurations
• High breakdown voltage capability suitable for driver stage applications
• Designed specifically for audio power amplifier circuits

Single Bipolar Transistors Applications

• Audio power amplifier stages
• Driver stage amplifiers
• General-purpose switching circuits

Single Bipolar Transistors Procurement Notes

Verify component authenticity through official Toshiba Semiconductor and Storage channels or authorized distributors. Confirm RoHS compliance status via specific ordering suffixes as indicated on packaging labels. Review the Toshiba Semiconductor Reliability Handbook for derating guidelines before integration into final designs.

Single Bipolar Transistors Selection Notes

Select this component when designing complementary pairs requiring high-voltage handling and moderate current drive capabilities. Ensure thermal management accommodates the 900 mW dissipation limit within the TO-92MOD package constraints. Validate hFE binning requirements against circuit gain specifications during the design phase.

Single Bipolar Transistors Part Context

This NPN transistor belongs to Toshiba's general-purpose discrete semiconductor lineup. It is engineered for use in consumer electronics and industrial equipment where reliable amplification and switching are required. The device adheres to standard JEDEC mechanical dimensions for through-hole mounting.

Single Bipolar Transistors Replacement Considerations

The 2SA965 serves as the designated complementary PNP counterpart. Verify pinout compatibility and electrical parameter alignment before substituting with other NPN transistors from different manufacturers.

Single Bipolar Transistors FAQ

What is the complementary transistor for the 2SC2235?

The 2SA965 is the specified complementary PNP transistor designed for paired operation.

What is the maximum collector-emitter voltage rating?

The absolute maximum rating for collector-emitter voltage (VCEO) is 120 V.

What is the typical transition frequency?

The typical transition frequency (fT) is 120 MHz under standard test conditions.