2SC2235-Y(T6FJT,FM

Single Bipolar Transistors Overview

The 2SC2235-Y(T6FJT,FM) is a silicon NPN epitaxial transistor manufactured by Toshiba Semiconductor and Storage using the PCT process. It features a collector-emitter breakdown voltage of 120 V and a maximum collector current of 800 mA. The device has a transition frequency of 120 MHz and a collector power dissipation of 900 mW. The 'Y' suffix indicates a DC current gain (hFE) classification of 120 to 240 at 100 mA. It is housed in a JEDEC TO-92MOD package.

Single Bipolar Transistors Feature Summary

• Complementary pairing with the 2SA965 PNP transistor for push-pull configurations
• High-voltage capability suitable for demanding amplifier stages
• Optimized transition frequency for audio driver applications

Single Bipolar Transistors Applications

• Audio power amplifier circuits
• Driver stage amplifiers

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to confirm environmental compliance status, such as RoHS compatibility, as indicated by lot markings. Confirm that the component meets the required hFE binning specifications for your design. Review the absolute maximum ratings carefully to ensure proper derating under operating conditions.

Single Bipolar Transistors Selection Notes

Select this component when designing complementary pairs requiring high-voltage handling and moderate power dissipation. Ensure the application operates within the safe operating area curves provided in the datasheet. Consider the thermal resistance and ambient temperature constraints given the 900 mW power dissipation limit in the specified package.

Single Bipolar Transistors Part Context

This part belongs to the 2SC2235 series of general-purpose NPN transistors designed for audio and driver applications. It utilizes Toshiba's PCT process technology to achieve reliable performance in standard through-hole packages. The series is commonly used in consumer electronics and industrial equipment where robust switching and amplification are required.

Single Bipolar Transistors Replacement Considerations

The 2SA965 is documented as the complementary PNP counterpart. Verify pinout compatibility and electrical parameters before substituting with other NPN transistors offering similar voltage and current ratings.

Single Bipolar Transistors FAQ

What does the 'Y' suffix indicate regarding the 2SC2235?

The 'Y' suffix denotes a specific DC current gain (hFE) classification range of 120 to 240 when tested at a collector current of 100 mA.

Is the 2SC2235 intended for use in aerospace or medical equipment?

No, the product is explicitly restricted from use in unintended applications such as aerospace, medical equipment, nuclear facilities, or transportation control systems.