2SC22950BL

Overview

The Panasonic 2SC22950BL is a silicon NPN epitaxial planar transistor designed for high-frequency amplification. It operates with a collector-emitter voltage of 20 V and a collector current of 30 mA, dissipating up to 200 mW. The device features a transition frequency ranging from 150 MHz to 250 MHz at 200 MHz test conditions. Electrical characteristics include a forward current transfer ratio (hFE) between 70 and 220, and a noise figure of 2.8 dB to 4.0 dB at 5 MHz. Packaged in the Mini3-G1 (EIAJ SC-59) format, it serves as a complementary component to the 2SA1022.

Feature Summary

• Optimized for RF amplification within FM/AM radio circuits
• High transition frequency suitable for signal processing
• Miniature package design enabling equipment downsizing
• Supports automatic insertion via tape or magazine packing

Applications

• RF amplification stages in FM radios
• RF amplification stages in AM radios
• General-purpose high-frequency signal amplification

Procurement Notes

Verify the specific lifecycle status before procurement, as the datasheet indicates maintenance or discontinuation phases. Confirm that the ordering suffix 'BL' corresponds to the required packaging configuration. Ensure compliance with RoHS Directive (EU 2002/95/EC) requirements for your manufacturing process. Request the latest Product Standards directly from Panasonic to validate current specifications prior to final design implementation.

Selection Notes

Select this component when designing circuits requiring an NPN transistor with a minimum transition frequency of 150 MHz. Ensure the application stays within the 20 V collector-emitter voltage limit and 30 mA maximum collector current. Verify that the Mini3-G1 package dimensions fit the available PCB space. Consider the complementary 2SA1022 PNP transistor if push-pull amplifier configurations are necessary for the design.

Part Context

The 2SC2295 series represents a line of silicon NPN transistors engineered specifically for high-frequency applications. This model utilizes an epitaxial planar structure to achieve superior performance metrics compared to older technologies. Designed to complement the 2SA1022 PNP counterpart, it facilitates balanced circuit designs. The product adheres to Japanese Industrial Standard JIS C 7030 measurement methods for transistor characterization.

Replacement Considerations

The official complementary part number is 2SA1022. No other direct substitute part numbers are documented in the provided source material.