2SC2383-O,T6ALPF(M

Single Bipolar Transistors Overview

The Toshiba 2SC2383 is a silicon NPN epitaxial planar transistor utilizing the PCT process. It features a collector-emitter breakdown voltage of 160 V and supports a continuous collector current of 1 A with a power dissipation rating of 900 mW. The device exhibits a transition frequency ranging from 20 to 100 MHz at 200 mA, alongside a DC current gain between 60 and 320 depending on classification. Operating temperatures span from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability for robust operation in high-voltage circuits
• Large continuous collector current capacity suitable for output stages
• Complementary pairing available with the 2SA1013 PNP transistor

Single Bipolar Transistors Applications

• Color TV vertical deflection output circuits
• Class-B sound output applications in line-operated televisions

Single Bipolar Transistors Procurement Notes

Verify specific ordering suffixes against official documentation to confirm exact hFE classifications and environmental compliance status. Confirm package type JEDEC TO-92MOD matches design requirements. Review the Toshiba Semiconductor Reliability Handbook for derating concepts before finalizing designs under heavy loads or extreme temperature variations.

Single Bipolar Transistors Selection Notes

Select this component for general electronics applications requiring high voltage handling and substantial current drive capabilities. Ensure thermal management aligns with the 900 mW dissipation limit. Verify that the complementary 2SA1013 meets system requirements if push-pull configurations are utilized. Consult reliability data for critical operational environments.

Single Bipolar Transistors Part Context

This NPN transistor belongs to Toshiba's lineup of silicon epitaxial planar devices designed for robust performance in consumer electronics. It serves as a key component in television circuitry, specifically addressing the demands of vertical deflection and audio output stages where high voltage and current handling are essential.

Single Bipolar Transistors Replacement Considerations

The 2SA1013 is documented as the complementary PNP counterpart. No other direct substitutes are confirmed in the provided datasheet.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage rating?

The absolute maximum collector-emitter voltage (VCEO) is rated at 160 V.

Is this transistor compatible with the 2SA1013?

Yes, the datasheet explicitly states it is complementary to the 2SA1013.

What is the specified transition frequency range?

The transition frequency (fT) ranges from 20 MHz to 100 MHz when measured at a collector current of 200 mA.