2SC2383-Y(T6DNS,FM

Single Bipolar Transistors Overview

The Toshiba 2SC2383 is a silicon NPN epitaxial planar transistor manufactured using the PCT process. It features a collector-emitter breakdown voltage of 160 V and supports a continuous collector current of 1 A with a power dissipation rating of 900 mW. The device operates within a junction temperature range of -55 °C to +150 °C. Electrical characteristics include a DC current gain (hFE) ranging from 60 to 320, a transition frequency (fT) between 20 MHz and 100 MHz, and a maximum collector-base voltage of 160 V.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability for robust operation in high-voltage circuits
• Large continuous collector current capacity suitable for output stages
• Designed as a complementary pair to the 2SA1013 PNP transistor

Single Bipolar Transistors Applications

• Color TV vertical deflection output circuits
• Class-B sound output applications for line-operated televisions

Single Bipolar Transistors Procurement Notes

Verify the specific hFE classification suffix required for your design, such as Y for gains between 160 and 320. Confirm RoHS compatibility status directly with Toshiba sales representatives, as environmental compliance varies by production lot. Ensure the TO-92MOD package dimensions align with your PCB footprint requirements before finalizing component selection.

Single Bipolar Transistors Selection Notes

Select this component when designing color television circuits requiring high voltage handling and substantial current drive capabilities. The device is specifically optimized for vertical deflection and audio output stages. Consider the complementary 2SA1013 if a matched PNP counterpart is needed for push-pull configurations. Verify thermal management strategies to maintain junction temperatures within the specified safe operating area limits.

Single Bipolar Transistors Part Context

This component belongs to Toshiba's lineup of general-purpose small signal transistors designed for consumer electronics. It utilizes an epitaxial planar structure to ensure stable performance under demanding electrical conditions. The transistor is widely recognized in legacy television repair and manufacturing sectors for its reliability in analog output stages.

Single Bipolar Transistors Replacement Considerations

The 2SA1013 serves as the designated complementary PNP transistor for this device. Direct replacements should match the 160 V breakdown voltage and 1 A current ratings while maintaining similar saturation characteristics.