2SC2411-P-TP

Single Bipolar Transistors Overview

The MCC 2SC2411-P-TP is an NPN silicon epitaxial transistor housed in a SOT-23 package. It features a maximum collector-emitter voltage (VCEO) of 32 V and a continuous collector current (IC) of 500 mA. The device offers a power dissipation rating of 200 mW at 25°C with a thermal resistance of 625 °C/W. Electrical characteristics include a transition frequency (fT) of 250 MHz, a DC current gain (hFE) range of 82 to 390, and a collector-emitter saturation voltage (VCE(sat)) of 0.4 V. The 'P' suffix indicates RoHS compliance.

Single Bipolar Transistors Feature Summary

• Low VCE(sat) optimized for low voltage operation
• Halogen-free "Green" device construction
• Moisture Sensitivity Level 1 classification
• Epoxy meets UL 94 V-0 flammability rating

Single Bipolar Transistors Applications

• General purpose switching applications
• Low voltage amplifier circuits
• Driver stages for logic interfaces

Single Bipolar Transistors Procurement Notes

Verify the component marking code against the datasheet table to confirm authenticity. Ensure the ordering suffix matches the required packaging format, as the -TP designation specifies tape and reel quantities. Purchase only from authorized distributors to guarantee traceability and avoid counterfeit risks. Confirm that the specific lot meets the required environmental standards if operating in harsh conditions.

Single Bipolar Transistors Selection Notes

Select this component when a small signal NPN transistor is required with a 32 V collector-emitter breakdown voltage. The SOT-23 package is suitable for space-constrained PCB layouts. Consider the hFE classification ranges (P, Q, R) if specific gain thresholds are necessary for the circuit design. The low saturation voltage makes it appropriate for battery-powered or low-voltage logic systems.

Single Bipolar Transistors Part Context

This part belongs to the 2SC2411 series of NPN silicon epitaxial transistors manufactured by Micro Commercial Components. It is designed as a general-purpose small-signal device. The series utilizes standard semiconductor fabrication processes to achieve reliable performance across the specified temperature range of -55°C to +150°C.

Single Bipolar Transistors Replacement Considerations

Direct substitutes must match the NPN configuration, SOT-23 package, and minimum 32 V VCEO rating. Verify that alternative parts meet the 500 mA IC requirement and similar hFE characteristics. Check pinout compatibility to ensure Base, Emitter, and Collector alignments match the original footprint.

Single Bipolar Transistors FAQ

What does the 'P' suffix indicate in the part number?

The 'P' suffix designates that the device is RoHS compliant.

What is the maximum operating junction temperature?

The maximum operating junction temperature is +150°C.

How is the DC current gain classified?

The DC current gain (hFE) is classified into three bins: P (82-180), Q (120-270), and R (180-390).