2SC2619FCTR-E

Single Bipolar Transistors Overview

The 2SC2619FCTR-E is an NPN silicon epitaxial planar transistor manufactured by Renesas Electronics Corporation. It is designed for high-frequency amplifier applications, featuring a transition frequency (fT) of 230 MHz. The device supports a maximum collector current (IC) of 0.1 A and a collector-emitter voltage (VCEO) of 30 V. It is housed in the MPAK-3 surface-mount package, which utilizes a small outline form factor with three terminals.

Single Bipolar Transistors Feature Summary

• Engineered as a silicon NPN epitaxial planar structure optimized for RF signal processing.
• Capable of operating at high frequencies with a specified transition frequency of 230 MHz.
• Designed for compact surface-mount integration using the MPAK-3 package configuration.

Single Bipolar Transistors Applications

• High-frequency amplification circuits
• RF small signal processing

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'FCTR-E' against official Renesas documentation to confirm tape-and-reel packaging and material compliance status. Ensure the ordering code matches the exact electrical specifications required for the target design, as suffixes may indicate variations in packaging or environmental ratings.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring an NPN transistor with a 230 MHz transition frequency and 30 V collector-emitter voltage rating. The MPAK-3 package is suitable for space-constrained PCB layouts. Confirm that the 0.1 A maximum collector current meets the circuit's load requirements.

Single Bipolar Transistors Part Context

This part belongs to the 2SC2619 series of silicon NPN transistors produced by Renesas Electronics. The series is categorized under discrete semiconductors and small-signal transistors intended for general-purpose high-frequency applications. The manufacturer provides technical data sheets detailing absolute maximum ratings and electrical characteristics for design reference.

Single Bipolar Transistors Replacement Considerations

Consult official Renesas documentation for confirmed substitute part numbers. Cross-reference electrical parameters such as fT, VCEO, and IC to ensure compatibility with existing circuit designs before implementing any alternative components.