2SC26310RA

Description：TRANS NPN 150V 0.05A TO-92-B1
Series：-

SKU:9a72dbf67c6e Category: Single Bipolar Transistors Brand: Panasonic Electronic Components

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Product introduction

2SC26310RA is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is TRANS NPN 150V 0.05A TO-92-B1. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC26310RA

Description：TRANS NPN 150V 0.05A TO-92-B1
Series：-
Mfr：Panasonic Electronic Components
Package：Cut Tape (CT),Tape & Box (TB)
Transistor Type：NPN
Current - Collector (Ic) (Max)：50 mA
Voltage - Collector Emitter Breakdown (Max)：150 V
Vce Saturation (Max) @ Ib, Ic：1V @ 3mA, 30mA
Current - Collector Cutoff (Max)：1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：130 @ 10mA, 5V
Power - Max：750 mW
Frequency - Transition：160MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package：TO-92-B1
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SC26310RA

2SC26310RA

Single Bipolar Transistors Overview

The Panasonic 2SC2631 is a silicon NPN epitaxial planar transistor designed for low-frequency high breakdown voltage amplification. It features a collector-emitter voltage of 150 V, a collector current of 50 mA, and a power dissipation of 750 mW. The device offers a forward current transfer ratio (hFE) ranging from 130 to 330 depending on the rank, with a transition frequency of 160 MHz and a collector output capacitance of 3 pF.

Single Bipolar Transistors Feature Summary

High collector-emitter voltage capability suitable for high breakdown applications
Satisfactory linearity of forward current transfer ratio hFE
Small collector output capacitance for efficient signal handling

Single Bipolar Transistors Applications

Low-frequency high breakdown voltage amplification
General electronic equipment such as office equipment and household appliances
Communications equipment and measuring instruments

Single Bipolar Transistors Procurement Notes

Verify the specific product lifecycle stage before procurement, as this component falls under maintenance or discontinued categories. Consult official Panasonic channels for the most up-to-date Product Standards and availability status. Ensure compliance with RoHS directives and confirm that the intended application aligns with standard general electronic equipment usage rather than specialized safety-critical systems.

Single Bipolar Transistors Selection Notes

Select the appropriate hFE rank based on circuit requirements: Rank R provides a range of 130 to 220, while Rank S offers 185 to 330. Consider the 150 V collector-emitter voltage limit and 750 mW power dissipation when designing thermal management. Verify compatibility with the TO-92-B1 package dimensions and ensure operating conditions remain within absolute maximum ratings to prevent failure.

Single Bipolar Transistors Part Context

This component serves as a complementary device to the 2SA1123 PNP transistor. Manufactured by Panasonic Electronic Components, it utilizes a silicon NPN epitaxial planar structure. The device is housed in an EIAJ SC-43A TO-92-B1 package, featuring three pins arranged for emitter, collector, and base connections.