2SC2655-O(TE6,F,M)

Description：TRANS NPN 50V 2A TO-92MOD
Series：-

SKU:4fbec3604ad3 Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SC2655-O(TE6,F,M) is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 50V 2A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC2655-O(TE6,F,M)

Description：TRANS NPN 50V 2A TO-92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：2:00 AM
Voltage - Collector Emitter Breakdown (Max)：50 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 1A
Current - Collector Cutoff (Max)：1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 500mA, 2V
Power - Max：900 mW
Frequency - Transition：100MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 Long Body
Supplier Device Package：TO-92MOD
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SC2655-O(TE6,F,M)

2SC2655-O(TE6,F,M)

Single Bipolar Transistors Overview

The Toshiba 2SC2655 is an NPN silicon epitaxial transistor utilizing the PCT process, housed in a JEDEC TO-92MOD package. It features a collector-emitter breakdown voltage of 50 V and a continuous collector current rating of 2 A. The device supports a maximum collector power dissipation of 900 mW at 25°C ambient temperature. Electrical characteristics include a low saturation voltage of 0.5 V (max) at 1 A collector current and a transition frequency of 100 MHz. Storage time is typically 1.0 μs.

Single Bipolar Transistors Feature Summary

Low saturation voltage for efficient power switching
High-speed switching capability with short storage times
Complementary pairing with the 2SA1020 PNP transistor

Single Bipolar Transistors Applications

Power amplifier circuits
General-purpose power switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm environmental compliance status, as markings indicate RoHS compatibility or standard product lines. Confirm the pinout configuration matches the intended circuit design, as variations exist between manufacturers. Ensure the selected component meets the required DC current gain classification for the specific application load conditions.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high collector current handling up to 2 A within a compact through-hole package. Consider the complementary 2SA1020 for push-pull configurations. Evaluate thermal management requirements carefully, as the 900 mW dissipation limit requires appropriate heat sinking or derating at elevated ambient temperatures above 25°C.

Single Bipolar Transistors Part Context

This NPN transistor belongs to Toshiba's general-purpose discrete semiconductor lineup designed for robust performance in consumer electronics and industrial equipment. It serves as a standard replacement for legacy components in audio amplification and switching regulator topologies where moderate voltage ratings and high current capacity are essential.