2SC2655-Y(T6CANOFM

Single Bipolar Transistors Overview

The Toshiba 2SC2655 is an NPN silicon epitaxial transistor designed for power amplifier and switching applications. It features a low collector-emitter saturation voltage of 0.5 V maximum at 1 A, high-speed switching with a storage time of 1.0 μs typical, and a collector power dissipation of 900 mW. The device has a collector current rating of 2 A and breakdown voltages of 50 V for both collector-base and collector-emitter configurations. It operates within a junction temperature range up to 150 °C.

Single Bipolar Transistors Feature Summary

• Low saturation voltage for efficient power handling
• High-speed switching capability
• Complementary pairing with the 2SA1020 PNP transistor

Single Bipolar Transistors Applications

• Power amplifier circuits
• Power switching applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status directly with Toshiba sales representatives, as markings indicate specific environmental compliance levels. Confirm the Y suffix corresponds to the required DC current gain classification (hFE 120 to 240) before procurement. Ensure designs account for derating concepts outlined in the Toshiba Semiconductor Reliability Handbook to maintain long-term operational reliability under heavy loads.

Single Bipolar Transistors Selection Notes

Select this component when a low saturation voltage and fast switching speed are required for general electronics or industrial applications. The Y suffix indicates a higher DC current gain range compared to other classifications. Ensure the application does not involve unintended uses such as aerospace, medical equipment, or nuclear facilities, which require extraordinary reliability standards beyond this product's scope.

Single Bipolar Transistors Part Context

This NPN transistor utilizes Toshiba's PCT (Process Control Technology) epitaxial process. It is housed in a JEDEC TO-92MOD package, weighing approximately 0.36 g. The device is specifically engineered to complement the 2SA1020 PNP transistor, facilitating push-pull configurations in audio and power amplification stages.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SA1020 as the complementary PNP counterpart. No direct substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the DC current gain range for the 2SC2655-Y variant?

The Y suffix designates a DC current gain (hFE) range of 120 to 240 when measured at IC = 0.5 A and VCE = 2 V.

Is this component suitable for automotive or medical applications?

No. The documentation explicitly prohibits use in equipment requiring extraordinarily high reliability, including automobiles, medical equipment, and transportation systems.

What is the maximum collector power dissipation?

The maximum collector power dissipation is rated at 900 mW at an ambient temperature of 25 °C.