2SC2655-Y(T6ND1,AF

Single Bipolar Transistors Overview

The Toshiba 2SC2655 is an NPN silicon epitaxial planar transistor utilizing the PCT process, housed in a JEDEC TO-92MOD package. It features a maximum collector-emitter voltage of 50 V and a continuous collector current rating of 2 A. The device supports a collector power dissipation of 900 mW at 25°C ambient temperature. Key electrical characteristics include a low saturation voltage of 0.5 V (max) at 1 A, a transition frequency of 100 MHz, and a storage time of 1.0 μs. It serves as the complementary counterpart to the 2SA1020.

Single Bipolar Transistors Feature Summary

• Low saturation voltage for efficient power switching
• High-speed switching capability with short storage times
• Complementary pairing with the 2SA1020 PNP transistor

Single Bipolar Transistors Applications

• Power amplifier circuits
• General-purpose power switching applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status directly with Toshiba sales representatives, as markings indicate specific environmental compliance variations. Confirm the 'Y' hFE classification range (120 to 240) matches design requirements. Review the Toshiba Semiconductor Reliability Handbook for derating concepts and application precautions before finalizing designs.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high collector current handling up to 2 A and low saturation voltage. Ensure the required DC current gain falls within the Y classification range of 120 to 240. Consider the TO-92MOD package constraints for thermal management, noting the 900 mW dissipation limit. Verify suitability against absolute maximum ratings for voltage and junction temperature limits.

Single Bipolar Transistors Part Context

This NPN transistor belongs to Toshiba's general-purpose discrete semiconductor lineup designed for robust performance in consumer and industrial electronics. It is engineered using the PCT process to achieve high reliability and consistent electrical characteristics across operating temperatures.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SA1020 as the complementary PNP transistor. No other direct substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the hFE classification for the 'Y' suffix?

The 'Y' suffix indicates a DC current gain (hFE) classification ranging from 120 to 240 when tested at IC = 0.5 A and VCE = 2 V.

Is this transistor suitable for aerospace or medical equipment?

No. The document explicitly prohibits use in unintended applications such as aerospace, medical equipment, nuclear facilities, or transportation control systems due to reliability requirements.

What is the maximum base current rating?

The absolute maximum rating for base current (IB) is 0.5 A.