2SC2655-Y(T6ND2,AF

Single Bipolar Transistors Overview

The Toshiba 2SC2655 is a silicon NPN epitaxial planar transistor utilizing the PCT process. It features a maximum collector current of 2 A and a collector power dissipation of 900 mW at 25°C ambient temperature. The device provides a collector-emitter breakdown voltage of 50 V and a low saturation voltage of 0.5 V maximum at 1 A collector current. Transition frequency reaches 100 MHz, with a typical storage time of 1.0 μs. It is packaged in a JEDEC TO-92MOD case.

Single Bipolar Transistors Feature Summary

• Low saturation voltage for efficient switching performance
• High-speed switching capability with short storage time
• Complementary pairing available with the 2SA1020 model

Single Bipolar Transistors Applications

• Power amplifier circuits
• General power switching applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status directly with Toshiba sales representatives, as markings indicate specific environmental compliance variations. Confirm the Y classification indicates a DC current gain range of 120 to 240. Review the Toshiba Semiconductor Reliability Handbook for derating concepts before finalizing designs involving high temperatures or currents.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high collector current handling up to 2 A and robust power dissipation capabilities. Ensure the design accommodates the specified junction temperature limits and utilizes appropriate heat sinking if operating near maximum ratings. Verify that the complementary 2SA1020 meets system requirements if paired operation is necessary.

Single Bipolar Transistors Part Context

This device belongs to the family of general-purpose silicon NPN transistors designed for industrial and consumer electronics. It serves as a standard discrete semiconductor solution for amplification and switching tasks within broader electronic systems manufactured by Toshiba Semiconductor and Storage.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SA1020 as the complementary counterpart. No other direct substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the DC current gain range for the Y suffix?

The Y suffix classifies the transistor with a minimum DC current gain (hFE) ranging from 120 to 240 when tested at a collector current of 0.5 A.

Is this transistor suitable for aerospace or medical equipment use?

No. The document explicitly prohibits use in equipment requiring extraordinarily high reliability, such as aerospace, medical, or nuclear facilities, unless specifically permitted.

What is the maximum base current rating?

The absolute maximum rating for base current is 0.5 A.